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SI3590DV-T1-E3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownSI3590DV-T1-E3
Vishay Intertech · MOSFETs · TSOP-6
SI3590DV-T1-E3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET, with VGS rated ±12 V maximum and threshold of 0.6 V to 1.5 V at 250 µA. |
| 2 | S2 | passive | Source of the P-channel MOSFET, rated VDS -30 V with continuous drain current of -2 A (10 s) at TA = 25 °C. |
| 3 | G2 | input | Gate of the P-channel MOSFET, with VGS rated ±12 V maximum and threshold of -0.6 V to -1.5 V at -250 µA. |
| 4 | D2 | passive | Drain of the P-channel MOSFET, rated VDS -30 V with pulsed drain current IDM of -8 A. |
| 5 | S1 | passive | Source of the N-channel MOSFET, rated VDS 30 V with continuous drain current of 3 A (10 s) at TA = 25 °C. |
| 6 | D1 | passive | Drain of the N-channel MOSFET, rated VDS 30 V with pulsed drain current IDM of 8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TSOP-6 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate threshold voltage N-Ch | VGS(th) | 0.6 | 1.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate threshold voltage P-Ch | VGS(th) | -0.6 | -1.5 | V | VDS = VGS, ID = -250 μA | 2 | |
| Gate-body leakage N-Ch | IGSS | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | ||
| Gate-body leakage P-Ch | IGSS | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | ||
| Zero gate voltage drain current N-Ch | IDSS | 1 | μA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current P-Ch | IDSS | -1 | μA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current N-Ch hot | IDSS | 5 | μA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Zero gate voltage drain current P-Ch hot | IDSS | -5 | μA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-state drain current N-Ch | ID(on) | 5 | A | VDS ≥ 5 V, VGS = 4.5 V | 2 | ||
| On-state drain current P-Ch | ID(on) | -5 | A | VDS ≤ -5 V, VGS = -4.5 V | 2 | ||
| Drain-source on-state resistance N-Ch | RDS(on) | 0.062 | 0.077 | Ω | VGS = 4.5 V, ID = 3 A | 2 | |
| Drain-source on-state resistance P-Ch | RDS(on) | 0.135 | 0.17 | Ω | VGS = -4.5 V, ID = -2 A | 2 | |
| Drain-source on-state resistance N-Ch | RDS(on) | 0.095 | 0.12 | Ω | VGS = 2.5 V, ID = 2 A | 2 | |
| Drain-source on-state resistance P-Ch | RDS(on) | 0.235 | 0.3 | Ω | VGS = -2.5 V, ID = -1.2 A | 2 | |
| Diode forward voltage N-Ch | VSD | 0.8 | 1.1 | V | IS = 1.05 A, VGS = 0 V | 2 | |
| Diode forward voltage P-Ch | VSD | -0.83 | -1.1 | V | IS = -1.05 A, VGS = 0 V | 2 | |
| Total gate charge N-Ch | Qg | 3 | 4.5 | nC | VDS = 15 V, VGS = 4.5 V, ID = 2 A | 2 | |
| Total gate charge P-Ch | Qg | 3.8 | 6 | nC | VDS = -15 V, VGS = -4.5 V, ID = -2 A | 2 | |
| Turn-on delay time N-Ch | td(on) | 5 | 8 | ns | VDD = 15 V, RL = 15 Ω, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Turn-on delay time P-Ch | td(on) | 5 | 8 | ns | VDD = -15 V, RL = 15 Ω, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Rise time N-Ch | tr | 12 | 23 | ns | VDD = 15 V, RL = 15 Ω, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Rise time P-Ch | tr | 15 | 23 | ns | VDD = -15 V, RL = 15 Ω, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Turn-off delay time N-Ch | td(off) | 13 | 23 | ns | VDD = 15 V, RL = 15 Ω, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Turn-off delay time P-Ch | td(off) | 20 | 30 | ns | VDD = -15 V, RL = 15 Ω, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Fall time N-Ch | tf | 7 | 12 | ns | VDD = 15 V, RL = 15 Ω, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Fall time P-Ch | tf | 20 | 30 | ns | VDD = -15 V, RL = 15 Ω, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Reverse recovery time N-Ch | trr | 15 | 25 | ns | IF = 1.05 A, di/dt = 100 A/μs | 2 | |
| Reverse recovery time P-Ch | trr | 18 | 30 | ns | IF = -1.05 A, di/dt = 100 A/μs | 2 | |
| Drain-source voltage N-Ch | VDS | 30 | V | TA = 25 °C | 1 | ||
| Drain-source voltage P-Ch | VDS | -30 | V | TA = 25 °C | 1 | ||
| Gate-source voltage | VGS | -12 | 12 | V | TA = 25 °C, both channels | 1 | |
| Continuous drain current N-Ch 10 s | ID | 3 | A | TJ = 150 °C, TA = 25 °C, 10 s | 1 | ||
| Continuous drain current N-Ch steady state | ID | 2.5 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Continuous drain current P-Ch 10 s | ID | -2 | A | TJ = 150 °C, TA = 25 °C, 10 s | 1 | ||
| Continuous drain current P-Ch steady state | ID | -1.7 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Pulsed drain current N-Ch | IDM | 8 | A | 1 | |||
| Pulsed drain current P-Ch | IDM | -8 | A | 1 | |||
| Continuous source current N-Ch 10 s | IS | 1.05 | A | diode conduction, 10 s | 1 | ||
| Continuous source current N-Ch steady state | IS | 0.75 | A | diode conduction, steady state | 1 | ||
| Continuous source current P-Ch 10 s | IS | -1.05 | A | diode conduction, 10 s | 1 | ||
| Continuous source current P-Ch steady state | IS | -0.75 | A | diode conduction, steady state | 1 | ||
| Maximum power dissipation 10 s | PD | 1.15 | W | TA = 25 °C, 10 s, each channel | 1 | ||
| Maximum power dissipation steady state | PD | 0.83 | W | TA = 25 °C, steady state, each channel | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-ambient thermal resistance 10 s | RthJA | 93 | 110 | °C/W | t ≤ 10 s, N- and P-channel | 1 | |
| Junction-to-ambient thermal resistance steady state | RthJA | 130 | 150 | °C/W | Steady state, N- and P-channel | 1 | |
| Junction-to-foot thermal resistance | RthJF | 75 | 90 | °C/W | Steady state (drain), N- and P-channel | 1 | |
| Forward transconductance N-Ch | gfs | 10 | S | VDS = 5 V, ID = 3 A | 2 | ||
| Forward transconductance P-Ch | gfs | 5 | S | VDS = -5 V, ID = -2 A | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | pins 1,2,5, and 6. The copper plane connects the drain pins | 10 |
CAD (KiCad official)
- Symbol:
SI3590DV-T1-E3 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
si3590dv-t1-e3-etched.step/si3590dv-t1-e3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si3590dv-t1-e3.step/si3590dv-t1-e3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (13 pp, sha256
ca3ae2c3859cfa71, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).