component
SI2318
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2318
HXY MOSFET · MOSFETs · SOT-23
SI2318 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±20 V maximum and RDS(ON) specified at VGS=10V and 4.5V. |
| 2 | S | passive | Source; the body diode runs from source to drain, with a source-drain diode current of 1.75 A maximum. |
| 3 | D | passive | Drain; rated for VDS of 40 V and continuous drain current of 5 A at TC=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (TA=25℃) | IDSS | 1 | μA | VDS=40V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TA=125℃) | IDSS | 100 | uA | VDS=40V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.7 | 1.9 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) | 30 | 38 | mΩ | VGS=10V, ID=5A | 2 | |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) | 36 | 52 | mΩ | VGS=4.5V, ID=4A | 2 | |
| Source drain current (Body Diode) | ISD | 1.75 | A | TA=25℃ | 2 | ||
| Forward on voltage | VSD | 0.79 | 1.2 | V | Tj=25℃, ISD=3.5A, VGS=0V | 2 | |
| Drain-Source Voltage | VDS | 40 | V | TC=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ unless otherwise noted | 1 | |
| Drain Current, Continuous (TC=25℃) | ID | 5 | A | TC=25℃ | 1 | ||
| Drain Current, Continuous (TC=70℃) | ID | 4.2 | A | TC=70℃ | 1 | ||
| Power Dissipation (TC=25℃) | PD | 1.56 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to ambient | RθJA | 80 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SI2318 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2318-etched.step/si2318-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2318.step/si2318.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
3f3a752e4096e120, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).