component
IPD60R650CE
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPD60R650CE
Infineon Technologies · MOSFETs · TO-252
IPD60R650CE from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin of the MOSFET; static gate-source voltage limited to ±20 V (±30 V dynamic AC, f>1 Hz), with threshold 2.5 to 3.5 V. |
| 2 | Drain | passive | Drain pin (connected to the tab) with 600 V minimum drain-source breakdown and 9.9 A continuous drain current at TC=25°C. |
| 3 | Source | passive | Source pin of the MOSFET; continuous diode forward current up to 7 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS=0V,ID=0.25mA | 5 | ||
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS,ID=0.2mA | 5 |
| Zero gate voltage drain current | IDSS | 1 | 10 | µA | VDS=600,VGS=0V,Tj=25°C | 5 | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V,VDS=0V | 5 | ||
| Drain-source on-state resistance | RDS(on) | 0.54 | 0.65 | Ω | VGS=10V,ID=2.4A,Tj=25°C | 5 | |
| Continuous drain current | ID | 9.9 | A | TC=25°C | 3 | ||
| Continuous drain current | ID | 6.2 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 19 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 133 | mJ | ID=1.3A; VDD=50V | 3 | ||
| Avalanche energy, repetitive | EAR | 0.2 | mJ | ID=1.3A; VDD=50V | 3 | ||
| Avalanche current, repetitive | IAR | 1.3 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0...480V | 3 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static | 3 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation (Non FullPAK) TO-252 | Ptot | 82 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 3 | ||
| Operating junction temperature | Tj | -40 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 7 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 19 | A | TC=25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0...400V,ISD<=IS,Tj=25°C | 3 | ||
| Maximum diode commutation speed | dif/dt | 500 | A/µs | VDS=0...400V,ISD<=IS,Tj=25°C | 3 | ||
| Thermal resistance, junction - case | RthJC | 1.52 | °C/W | 4 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | device on PCB, minimal footprint | 4 | ||
| Thermal resistance, junction - ambient for SMD version | RthJA | 35 | 45 | °C/W | Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² copper area | 4 | |
| Soldering temperature | Tsold | 260 | °C | reflow MSL3 | 4 | ||
| Gate resistance | RG | 10 | Ω | f=1MHz,open drain | 5 | ||
| Input capacitance | Ciss | 440 | pF | VGS=0V,VDS=100V,f=1MHz | 5 | ||
| Output capacitance | Coss | 30 | pF | VGS=0V,VDS=100V,f=1MHz | 5 | ||
| Gate charge total | Qg | 20.5 | nC | VDD=480V,ID=3A,VGS=0to10V | 5 | ||
| Diode forward voltage | VSD | 0.9 | V | VGS=0V,IF=3A,Tj=25°C | 6 |
CAD (KiCad official)
- Symbol:
IPD60R650CE - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd60r650ce-etched.step/ipd60r650ce-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd60r650ce.step/ipd60r650ce.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (16 pp, sha256
a9afe115f9137687, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).