component
FQP30N06L-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFQP30N06L-VB
VBsemi Elec · MOSFETs · TO-220AB
FQP30N06L-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal, rated for a gate-source voltage of ±20 V, with a gate threshold of 1.0 V to 2.5 V and logic-level drive (VGS = 5 V) specified. |
| 2 | D | passive | Drain terminal, rated for 60 V drain-source voltage and 50 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal, rated for a continuous source-drain diode current of 50 A and a pulsed diode forward current of 200 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 50 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 36 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Linear Derating Factor | 1 | W/°C | 1 | ||||
| Linear Derating Factor (PCB Mount) | 0.025 | W/°C | PCB mount | 1 | |||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | VDD = 25 V, starting TJ = 25 °C, L = 179 µH, Rg = 25 Ω, IAS = 51 A | 1 | ||
| Maximum Power Dissipation | PD | 150 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (PCB Mount) | 3.7 | W | TA = 25 °C | 1 | |||
| Peak Diode Recovery dV/dt | dV/dt | 4.5 | V/ns | ISD ≤ 51 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Ambient (PCB Mount) | RthJA | 40 | °C/W | mounted on 1 in square PCB (FR-4 or G-10 material) | 2 | ||
| Maximum Junction-to-Case (Drain) | RthJC | 1 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±10 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 48 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Forward Transconductance | gfs | 23 | S | VDS = 25 V, ID = 21 A | 2 | ||
| Total Gate Charge | Qg | 66 | nC | ID = 51 A, VDS = 48 V, VGS = 5.0 V | 2 | ||
| Gate-Source Charge | Qgs | 12 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 43 | nC | 2 | |||
| Continuous Source-Drain Diode Current | IS | 50 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 | ||
| Pulsed Diode Forward Current | ISM | 200 | A | 2 | |||
| Body Diode Voltage | VSD | 2.5 | V | TJ = 25 °C, IS = 51 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 130 | 180 | ns | TJ = 25 °C, IF = 51 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 0.84 | 1.3 | µC | 2 |
CAD (KiCad official)
- Symbol:
FQP30N06L-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
fqp30n06l-vb-etched.step/fqp30n06l-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fqp30n06l-vb.step/fqp30n06l-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
d3fefbebd903cbbf, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).