component
NCE3008XM
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownNCE3008XM
Wuxi NCE Power Semiconductor · MOSFETs · SOT-89-3L
NCE3008XM from Wuxi NCE Power Semiconductor, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the N-channel MOSFET, with a maximum gate-source voltage of ±12 V and operation with gate voltages as low as 2.5 V. |
| 2 | D | passive | Drain; rated for VDS = 30 V and continuous drain current ID = 8 A (30 A pulsed). |
| 3 | S | passive | Source; the body diode from source to drain is rated for IS = 8 A continuous with a forward voltage of at most 1.2 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-89-3L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.7 | 0.9 | 1.4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 33 | 55 | mΩ | VGS=2.5V, ID=4A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 26 | 39 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 24 | 33 | mΩ | VGS=10V, ID=8A | 2 | |
| Forward Transconductance | gFS | 10 | S | VDS=5V,ID=8A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=8A | 2 | ||
| Diode Forward Current | IS | 8 | A | 2 | |||
| Drain-Source Voltage | VDS | 30 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | 8 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 30 | A | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 3.5 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 35 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec | 1 | ||
| Input Capacitance | Clss | 595 | PF | VDS=15V,VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 39 | PF | VDS=15V,VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 36 | PF | VDS=15V,VGS=0V, F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 3 | nS | VDD=15V, RL=1.8Ω, VGS=10V,RGEN=3Ω | 2 | ||
| Turn-on Rise Time | tr | 4.5 | nS | VDD=15V, RL=1.8Ω, VGS=10V,RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 25 | nS | VDD=15V, RL=1.8Ω, VGS=10V,RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 3.8 | nS | VDD=15V, RL=1.8Ω, VGS=10V,RGEN=3Ω | 2 | ||
| Total Gate Charge | Qg | 9.3 | nC | VDS=15V,ID=8A, VGS=4.5V | 2 | ||
| Gate-Source Charge | Qgs | 1.6 | nC | VDS=15V,ID=8A, VGS=4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 2.1 | nC | VDS=15V,ID=8A, VGS=4.5V | 2 |
CAD (KiCad official)
- Symbol:
NCE3008XM - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
nce3008xm-etched.step/nce3008xm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce3008xm.step/nce3008xm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (8 pp, sha256
755406675b57983a, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).