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T2550-12I
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownT2550-12I
STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB-3
T2550-12I from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Main terminal A1, the reference terminal for A2 in the electrical characteristics; the device blocks up to 1200 V (VDRM/VRRM) and carries 25 A RMS. |
| 2 | A2 | passive | Main terminal A2 of the triac, rated for 1200 V repetitive peak off-state voltage and 25 A RMS on-state current (Tc = 71 °C for the insulated package). |
| 3 | G | input | Gate trigger input with IGT max 50 mA (VD = 12 V, RL = 33 Ω), VGT max 1.3 V, peak gate current IGM 4 A for 20 µs. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| RMS on-state current (full sine wave), TO-220AB Ins. | IT(RMS) | 25 | A | TO-220AB Ins. Tc = 71 °C | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 240 | A | full cycle, Tj initial = 25 °C; tp = 20 ms | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 252 | A | full cycle, Tj initial = 25 °C; tp = 16.7 ms | 2 | ||
| I2t value for fusing | I2t | 380 | A2s | tp = 10 ms | 2 | ||
| Critical rate of rise of on-state current | dI/dt | 100 | A/µs | IG = 2 x IGT, tr ≤ 100 ns; f = 60 Hz; Tj = 125 °C | 2 | ||
| Repetitive peak off-state voltage | VDRM/VRRM | 1200 | V | 2 | |||
| Non repetitive surge peak off-state voltage | VDSM/VRSM | 1300 | V | tp = 10 ms | 2 | ||
| Peak gate current | IGM | 4 | A | tp = 20 µs | 2 | ||
| Peak positive gate voltage | VGM | 16 | V | tp = 20 µs | 2 | ||
| Average gate power dissipation | PG(AV) | 1 | W | 2 | |||
| Storage junction temperature range | Tstg | -40 | 150 | °C | 2 | ||
| Operating junction temperature range | Tj | -40 | 125 | °C | 2 | ||
| Insulation RMS voltage, 1 minute | Vins. | 2500 | V | TO-220AB Ins., 1 minute | 2 | ||
| Gate trigger current | IGT | 2.5 | 50 | mA | VD = 12 V, RL = 33 Ω; quadrants I - II - III | 2 | |
| Gate trigger voltage | VGT | 1.3 | V | quadrants I - II - III | 2 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C; quadrants I - II - III | 2 | ||
| Holding current | IH | 60 | mA | IT = 500 mA, gate open | 2 | ||
| Latching current | IL | 80 | mA | IG = 1.2 IGT; quadrants I - II - III | 2 | ||
| Critical rate of rise of off-state voltage | dV/dt | 2500 | V/µs | VD = 67 % VDRM, gate open, Tj = 125 °C | 2 | ||
| Critical rate of decrease of main current | (dI/dt)c | 20 | A/ms | Without snubber, Tj = 125 °C | 2 | ||
| Turn-on time | tgt | 2 | µs | ITM = 13 A, VD = 400 V, IG = 100 mA, dIG/dt = 100 mA/µs, RL = 30 Ω; quadrants I - II - III | 2 | ||
| On-state voltage | VTM | 1.55 | V | ITM = 35 A, tp = 380 µs, Tj = 25 °C | 3 | ||
| Threshold on-state voltage | VTO | 0.85 | V | Tj = 125 °C | 3 | ||
| Dynamic resistance | RD | 20 | mΩ | Tj = 125 °C | 3 | ||
| Repetitive peak off-state current | IDRM/IRRM | 10 | µA | VD = VR = 1200 V, Tj = 25 °C | 3 | ||
| Repetitive peak off-state current | IDRM/IRRM | 6 | mA | VD = VR = 1200 V, Tj = 125 °C | 3 | ||
| Junction to case (AC), TO-220AB insulated | Rth(j-c) | 1.7 | °C/W | AC | 3 | ||
| Junction to ambient, TO-220AB / TO-220AB ins | Rth(j-a) | 60 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
T2550-12I - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files:
t2550-12i-etched.step/t2550-12i-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);t2550-12i.step/t2550-12i.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (14 pp, sha256
9031904ec977d1f7, retrieved 2026-10-25, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).