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PMBT5550

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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PMBT5550

Nexperia · Bipolar (BJT) · SOT-23

PMBT5550 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal; the datasheet limits peak base current to IBM 100 mA (single pulse, tp ≤ 1 ms).
2 E passive Emitter terminal; the emitter-base voltage is limited to VEBO 6 V (open collector).
3 C passive Collector terminal; the datasheet limits collector current to IC 300 mA (ICM 600 mA peak) with VCEO 140 V (open base) and VCBO 160 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 160 V open emitter 2
Collector-emitter voltage VCEO 140 V open base 2
Emitter-base voltage VEBO 6 V open collector 2
Collector current IC 300 mA 2
Peak collector current ICM 600 mA 2
Peak base current IBM 100 mA single pulse; tp ≤ 1 ms 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W in free air 2
Collector-base cut-off current ICBO 50 nA VCB = 100 V; IE = 0 A; Tj = 25 °C 3
Collector-base cut-off current ICBO 50 µA VCB = 100 V; Tamb = 100 °C 3
Emitter-base cut-off current IEBO 50 nA VEB = 4 V; IC = 0 A 3
DC current gain hFE 60 VCE = 5 V; IC = 1 mA 3
DC current gain hFE 60 250 VCE = 5 V; IC = 10 mA; Tj = 25 °C 3
DC current gain hFE 20 VCE = 5 V; IC = 50 mA; Tj = 25 °C 3
Collector-emitter saturation voltage VCEsat 150 mV IC = 10 mA; IB = 1 mA 3
Collector-emitter saturation voltage VCEsat 250 mV IC = 50 mA; IB = 5 mA 3
Base-emitter saturation voltage VBEsat 1 V IC = 10 mA; IB = 1 mA 3
Base-emitter saturation voltage VBEsat 1.2 V IC = 50 mA; IB = 5 mA 3
Collector capacitance Cc 6 pF VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz 3
Emitter capacitance Ce 30 pF VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz 3
Transition frequency fT 100 300 MHz VCE = 10 V; IC = 10 mA; f = 100 MHz 3
Noise figure NF 10 dB VCE = 5 V; IC = 200 µA; RS = 2 kΩ; 10 Hz ≤ f ≤ 15700 Hz 3

CAD (KiCad official)

  • Symbol: PMBT5550
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmbt5550-etched.step / pmbt5550-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmbt5550.step / pmbt5550.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 c1001e2f36e2da47, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF