component
IGW40N60TP
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIGW40N60TP
Infineon Technologies · IGBT Transistors / Modules · TO-247-3
IGW40N60TP from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage is rated at ±20 V maximum, with a typical threshold VGE(th) of 5.1 V (4.1 V min, 5.7 V max) at IC=0.64 mA. |
| 2 | C | passive | Collector (also connected to the mounting tab); collector-emitter voltage is rated 600 V and DC collector current 67 A at TC=25°C (48 A at TC=100°C). |
| 3 | E | passive | Emitter; power return of the IGBT, with a typical internal emitter inductance of 13 nH measured 5 mm from the case. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | 600 | V | Tvj ≥25°C | 4 | ||
| DC collector current | IC | 67 | A | limited by Tvjmax; TC=25°C | 4 | ||
| DC collector current | IC | 48 | A | limited by Tvjmax; TC=100°C | 4 | ||
| Pulsed collector current | ICpuls | 120 | A | tp limited by Tvjmax | 4 | ||
| Turn off safe operating area current | 120 | A | VCE ≤600V, Tvj ≤175°C, tp=1µs | 4 | |||
| Gate-emitter voltage | VGE | -20 | 20 | V | 4 | ||
| Short circuit withstand time | tSC | 5 | µs | VGE=15.0V, VCC ≤400V, Tvj=150°C | 4 | ||
| Power dissipation | Ptot | 246 | W | TC=25°C | 4 | ||
| Power dissipation | Ptot | 123 | W | TC=100°C | 4 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 4 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 4 | ||
| Soldering temperature | 260 | °C | wave soldering 1.6mm from case for 10s | 4 | |||
| Mounting torque | M | 0.6 | Nm | M3 screw | 4 | ||
| IGBT thermal resistance, junction - case | Rth(j-c) | 0.41 | 0.61 | K/W | 4 | ||
| Collector-emitter breakdown voltage | V(BR)CES | 600 | V | VGE=0V, IC=2.00mA | 5 | ||
| Collector-emitter saturation voltage | VCEsat | 1.6 | 1.8 | V | VGE=15.0V, IC=40.0A, Tvj=25°C | 5 | |
| Collector-emitter saturation voltage | VCEsat | 1.94 | V | VGE=15.0V, IC=40.0A, Tvj=175°C | 5 | ||
| Gate-emitter threshold voltage | VGE(th) | 4.1 | 5.1 | 5.7 | V | IC=0.64mA, VCE=VGE | 5 |
| Zero gate voltage collector current | ICES | 40 | µA | VCE=600V, VGE=0V, Tvj=25°C | 5 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE=0V, VGE=20V | 5 |
CAD (KiCad official)
- Symbol:
IGW40N60TP - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
igw40n60tp-etched.step/igw40n60tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);igw40n60tp.step/igw40n60tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (14 pp, sha256
a004828590befcbb, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).