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Contents

README

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CRST030N10N

CRMICRO · MOSFETs · TO-220

CRST030N10N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2.2 V min, 3 V typ, 3.8 V max at ID=250 µA.
2 D passive Drain, also connected to the mounting tab; drain-source voltage 100 V max, continuous current 180 A (package limit) at TC=25°C.
3 S passive Source; body diode runs from source to drain, with forward voltage VSD of 0.9 V typ and 1.4 V max at ISD=90 A.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 100 V 1
Continuous drain current (TC = 25°C, silicon limit) ID 207 A TC = 25°C (Silicon limit) 1
Continuous drain current (TC = 25°C, package limit) ID 180 A TC = 25°C (Package limit) 1
Continuous drain current (TC = 100°C, silicon limit) ID 131 A TC = 100°C (Silicon limit) 1
Pulsed drain current ID pulse 720 A TC = 25°C, tp limited by Tjmax 1
Avalanche energy, single pulse EAS 529 mJ L=0.5mH, Rg=25Ω 1
Gate-source voltage VGS -20 20 V 1
Power dissipation Ptot 227 W TC = 25°C 1
Operating junction and storage temperature Tj, Tstg -55 150 °C 1
Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS, ID=250uA 2
Zero gate voltage drain current IDSS 0.05 1 µA VDS=100V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current IDSS 10 µA VDS=100V, VGS=0V, Tj=125°C 2
Gate-source leakage current IGSS 10 100 nA VGS=±20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 2.5 3 mΩ VGS=10V, ID=90A 2
Gate resistance RG 1.8 Ω VGS=0V, VDS=0V, f=1MHz 2
Input capacitance Ciss 11355 pF VGS=0V, VDS=50V, f=1MHz 2
Output capacitance Coss 1446 pF VGS=0V, VDS=50V, f=1MHz 2
Reverse transfer capacitance Crss 54 pF VGS=0V, VDS=50V, f=1MHz 2
Gate total charge QG 169 nC VGS=10V, VDS=50V, ID=90A, f=1MHz 2
Transconductance gfs 111 S VDS=5V, ID=90A 2
Body diode forward voltage VSD 0.9 1.4 V VGS=0V, ISD=90A 3
Body diode reverse recovery time trr 101 ns IF=90A, dI/dt=100A/µs 3
Body diode reverse recovery charge Qrr 338 nC IF=90A, dI/dt=100A/µs 3
Thermal resistance, junction to case RthJC 0.55 °C/W 2
Thermal resistance, junction to ambient (min. footprint) RthJA 62 °C/W min. footprint 2
Thermal resistance, junction to ambient (min. footprint) RthJA 100 °C/W min. footprint 2

CAD (KiCad official)

  • Symbol: CRST030N10N
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: crst030n10n-etched.step / crst030n10n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); crst030n10n.step / crst030n10n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (10 pp, sha256 eec133b3c8621384, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF