component
AUN063N10
Public Made by Adomby adom
ANHI MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownAUN063N10
ANHI · MOSFETs · DFN5x6-8
AUN063N10 from ANHI, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 2 and 3. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate terminal with VGS rated -20 V to 20 V static and threshold Vth of 2.4 to 3.4 V. |
| 5 | D | passive | Drain terminal (100 V VDS), tied with pins 6, 7, 8 and the drain tab. |
| 6 | D | passive | Drain terminal (100 V VDS), tied with pins 5, 7, 8 and the drain tab. |
| 7 | D | passive | Drain terminal (100 V VDS), tied with pins 5, 6, 8 and the drain tab. |
| 8 | D | passive | Drain terminal (100 V VDS), tied with pins 5, 6, 7 and the drain tab. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | DFN5x6-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 123 | A | TC=25°C | 2 | ||
| Pulsed drain current | ID,pulse | 396 | A | TC=25°C | 2 | ||
| Avalanche energy, single pulse | EAS | 240 | mJ | Tc=25℃, VDD=50V, I=31A, L=0.5mH, RG=25Ω | 2 | ||
| Avalanche current, single pulse | IAR | 31 | A | Tc=25℃, VDD=50V, L=0.5mH, RG=25Ω | 2 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static; | 2 | |
| Power dissipation | Ptot | 151 | W | TC=25°C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Operating junction temperature | Tj | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction - case | RthJC | 1.3 | °C/W | 3 | |||
| Thermal resistance, junction - ambient | RthJA | 50 | °C/W | device on PCB, minimal footprint | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA | 4 | ||
| Gate threshold voltage | V(GS)th | 2.4 | 3.4 | V | VDS=VGS, ID=250uA | 4 | |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=95V, VGS=0V, Tj=25°C | 4 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 4 | |
| Drain-source on-state resistance | RDS(on) | 5.5 | 6.3 | mΩ | VGS=10V, ID=20A, Tj=25°C | 4 |
CAD (KiCad official)
- Symbol:
AUN063N10 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
aun063n10-etched.step/aun063n10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aun063n10.step/aun063n10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ANHI datasheet (8 pp, sha256
d3d4767746b1f965, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).