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SP60N12GTH

Public Made by Adom

by adom

Siliup MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SP60N12GTH

Siliup · MOSFETs · TO-252

SP60N12GTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet limits gate-source voltage VGSS to ±20 V and gives VGS(th) of 1 V min, 1.6 V typ, 2.5 V max at VDS=VGS, ID=250 µA.
2 D passive Drain terminal; the datasheet rates drain-source voltage VDSS at 60 V and continuous drain current ID at 30 A (Tc=25°C) and 20 A (Tc=100°C).
3 S passive Source terminal; the datasheet gives body-diode forward voltage VSD of 1.2 V max at IS=1 A and maximum body-diode continuous current IS of 30 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current (Tc=25°C) ID 30 A Tc=25°C 2
Continuous Drain Current (Tc=100°C) ID 20 A Tc=100°C 2
Pulse Drain Current Tested IDM 120 A 2
Single Pulse Avalanche Energy EAS 100 mJ VDD=30V,VGS=10V,L=0.5mH,RG=25Ω (note 1) 2
Power Dissipation (Tc=25°C) PD 55 W Tc=25°C 2
Maximum Junction Temperature TJ -55 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Thermal Resistance Junction-to-Case RθJC 2.27 °C/W 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250mA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=48V, VGS=0V 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250uA 2
Drain-Source On-state Resistance RDS(ON) 12 16 mΩ VGS=10V, ID=20A 2
Drain-Source On-state Resistance RDS(ON) 15 22 mΩ VGS=4.5V, ID=10A 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 30 A 2

CAD (KiCad official)

  • Symbol: SP60N12GTH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sp60n12gth-etched.step / sp60n12gth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp60n12gth.step / sp60n12gth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 d8c5ca6a63a4a9b9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF