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Contents

README

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WGD11N45SE

Wild Goose · MOSFETs · TO-252

WGD11N45SE from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET; the datasheet limits gate-source voltage VGSS to ±30 V.
2 D passive Drain of the MOSFET; the datasheet rates drain-source voltage VDSS at 450 V and drain current ID at 11 A (TC=25℃).
3 S passive Source of the MOSFET; the datasheet gives an avalanche energy rating EAS of 500 mJ and a maximum junction temperature of 150 ℃ for the device.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-252
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: WGD11N45SE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wgd11n45se-etched.step / wgd11n45se-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wgd11n45se.step / wgd11n45se.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 8a2fad71933472e4, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF