component
HESDM3033N2T5G
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHESDM3033N2T5G
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
HESDM3033N2T5G from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bi-directional ESD protection diode, which the datasheet describes as protecting one bi-directional line (VRWM 3.3 V max, clamping 11 V max at IPP 9 A, 8/20 µs). |
| 2 | 2 | passive | Second terminal of the bi-directional ESD protection diode, which is interchangeable with pin 1 because the device is bi-directional (typical capacitance 15 pF). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power | PPP | 100 | W | tp = 8/20 µs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| ESD air discharge | -30 | 30 | kV | IEC61000-4-2 | 1 | ||
| ESD contact discharge | -30 | 30 | kV | IEC61000-4-2 | 1 | ||
| EFT | 40 | A | IEC61000-4-4 | 1 | |||
| Reverse working voltage | VRWM | 3.3 | V | 2 | |||
| Breakdown voltage | VBR | 5 | V | IT = 1 mA, Note 1 | 2 | ||
| Reverse leakage current | IR | 0.05 | µA | @ VRWM | 2 | ||
| Clamping voltage | VC | 6.5 | V | IPP = 1 A, Note 2 | 2 | ||
| Clamping voltage at max IPP | VC | 11 | V | @ MAX IPP, Note 2 | 2 | ||
| Peak pulse current | IPP | 9 | A | Note 2 | 2 | ||
| Peak pulse power | PPK | 100 | W | Note 2 | 2 | ||
| Capacitance | C | 7 | 15 | pF | 2 | ||
| Dynamic resistance | RDYN | 0.2 | Ω | tp = 100 ns (TLP) | 2 |
CAD (KiCad official)
- Symbol:
HESDM3033N2T5G - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesdm3033n2t5g-etched.step/hesdm3033n2t5g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesdm3033n2t5g.step/hesdm3033n2t5g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
16580a48cb60996c, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).