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Contents

README

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ESD5651N-2

WILLSEMI(Will Semicon) · TVS · DFN1006-2L

ESD5651N-2 from WILLSEMI(Will Semicon), in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Pin1 passive One terminal of the bi-directional TVS; the device has a reverse stand-off voltage of ±4.5V max and gives ESD protection up to ±30kV (contact and air discharge) per IEC61000-4-2.
2 Pin2 passive The other terminal of the bi-directional TVS; the device has a reverse stand-off voltage of ±4.5V max and gives ESD protection up to ±30kV (contact and air discharge) per IEC61000-4-2.

Key specifications

Parameter Value
Manufacturer WILLSEMI(Will Semicon)
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse stand-off voltage VRWM -4.5 4.5 V 3
Junction capacitance CJ 65 80 pF VR = 0V, f = 1MHz 3
Junction capacitance CJ 45 60 pF VR = 4.5V, f = 1MHz 3
Reverse leakage current IR 1 μA VRWM = 4.5V 3
Reverse trigger voltage VTRIG 4.7 V ITRIG = 2μA 3
Reverse holding voltage VHOLD 4.6 V IHOLD = 50mA 3
Clamping voltage (note 1) VCL 6.5 V IPP = 16A, tp = 100ns 3
Clamping voltage (note 2) VCL 6.5 V VESD = 8kV 3
Clamping voltage (note 3) VCL 6 V IPP = 1A, tp = 8/20μs 3
Clamping voltage (note 3) VCL 11 V IPP = 20A, tp = 8/20μs 3
Clamping voltage (note 3) VCL 15 V IPP = 35A, tp = 8/20μs 3
Dynamic resistance (note 1) RDYN 0.12 Ω TLP, Z0 = 50Ω, tp = 100ns, tr = 2ns; RDYN calculated from 4A to 16A 3
Peak pulse power Ppk 525 W tp = 8/20μs 2
Peak pulse current IPP 35 A tp = 8/20μs 2
ESD according to IEC61000-4-2 air discharge VESD -30 30 kV IEC61000-4-2 air discharge 2
ESD according to IEC61000-4-2 contact discharge VESD -30 30 kV IEC61000-4-2 contact discharge 2
Junction temperature TJ 125 oC 2
Operating temperature TOP -40 85 oC 2
Lead temperature TL 260 oC 2
Storage temperature TSTG -55 150 oC 2

CAD (KiCad official)

  • Symbol: ESD5651N-2
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: esd5651n-2-etched.step / esd5651n-2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd5651n-2.step / esd5651n-2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI(Will Semicon) datasheet (7 pp, sha256 0de00f4fe9ca04c4, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF