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YSP040N010T1A

Public Made by Adom

by adom

luxin-semi IGBT Transistors / Modules, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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YSP040N010T1A

luxin-semi · IGBT Transistors / Modules · TO-220

YSP040N010T1A from luxin-semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2.0 V min to 4.0 V max at ID = 250 µA.
2 D passive Drain (also connected to the mounting tab); VDS rated 100 V, continuous ID 120 A at TC = 25°C and pulsed IDM 480 A.
3 S passive Source; RDS(on) below 4.2 mΩ at VGS = 10 V, ID = 50 A for the TO-220 package.

Key specifications

Parameter Value
Manufacturer luxin-semi
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage (rating) VDS 100 V Tj=25°C 2
Continuous drain current, TC=25°C ID 120 A TC = 25°C, limited by Tjmax 2
Continuous drain current, TC=100°C ID 110 A TC = 100°C, limited by Tjmax 2
Pulsed drain current IDM 480 A TC = 25°C, tp limited by Tjmax 2
Avalanche energy, single pulse EAS 306 mJ L=0.5mH, Rg=25Ω 2
Gate source voltage VGS -20 20 V 2
Power dissipation Ptot 236 W TC = 25°C 2
Operating junction and storage temperature Tj, Tstg -55 150 °C 2
Thermal resistance, junction-case Rθ(j-c) 0.54 °C/W 2
Thermal resistance, junction-ambient Rθ(j-a) 70 °C/W minimal footprint 2
Drain to Source Breakdown Voltage BVDSS 100 108 V VGS = 0V, ID = 250μA 2
Gate threshold voltage VGS(th) 2 3 4 V VGS = VCS, ID = 250μA 2
Zero gate voltage drain current, Tj=25°C IDSS 0.05 1 μA VDS = 100V, VGS = 0V, Tj=25°C 2
Zero gate voltage drain current, Tj=125°C IDSS 10 100 μA VDS = 100V, VGS = 0V, Tj=125°C 2
Gate-source leakage current IGSS 10 100 nA VGS = ±20V, VDS = 0V 2
Drain-source on-state resistance RDS(on) 3.4 4.2 mΩ VGS = 10V, ID = 50A, TO-220 2
Transconductance gfs 50 S VDS=5V, ID=50A 2
Input capacitance Ciss 4700 pF VDS = 50V, VGS = 0V, f = 1MHz 3
Output capacitance Coss 1080 pF VDS = 50V, VGS = 0V, f = 1MHz 3
Reverse transfer capacitance Crss 31 pF VDS = 50V, VGS = 0V, f = 1MHz 3
Gate total charge Qg 67 nC VGS=10V, VDS=50V, ID=20A, f=1MHz 3
Gate-source charge Qgs 27 nC VGS=10V, VDS=50V, ID=20A, f=1MHz 3
Gate-drain charge Qgd 11 nC VGS=10V, VDS=50V, ID=20A, f=1MHz 3
Turn-on delay time td(on) 29 ns VGS=10V, VDS=50V, RG=3.0Ω 3
Rise time tr 84 ns VGS=10V, VDS=50V, RG=3.0Ω 3
Turn-off delay time td(off) 46 ns VGS=10V, VDS=50V, RG=3.0Ω 3
Fall time tf 93 ns VGS=10V, VDS=50V, RG=3.0Ω 3
Gate resistance RG 1.8 Ω VDS = 0V, VGS = 0V, f=1MHz 3
Body diode forward voltage VSD 0.85 1.2 V ISD = 50A, VGS=0V 3
Body diode reverse recovery time trr 67 ns IF = 50A, dI/dt=100A/μs 3
Body diode reverse recovery charge Qrr 125 nC IF = 50A, dI/dt=100A/μs 3

CAD (KiCad official)

  • Symbol: YSP040N010T1A
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ysp040n010t1a-etched.step / ysp040n010t1a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ysp040n010t1a.step / ysp040n010t1a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: luxin-semi datasheet (8 pp, sha256 0c9fee7240dc4448, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF