component
HIRF630PBF
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHIRF630PBF
HXY MOSFET · MOSFETs · TO-220
HIRF630PBF from HXY MOSFET, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with VGS rated at ±20V maximum and a threshold of 2.0 to 4.0V. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 200V and ID of 9A at TC=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, connected to the return of the load current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=200V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS,ID=250μA | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 220 | 260 | mΩ | VGS=10V, ID=5A | 2 | |
| Forward Transconductance | gFS | 5 | S | VDS=15V,ID=4.5A | 2 | ||
| Diode Forward Voltage | VSD | 1.5 | V | VGS=0V,IS=9A | 2 | ||
| Diode Forward Current | IS | 9 | A | 2 | |||
| Drain-Source Voltage | VDS | 200 | V | Tj=25°C | 1 | ||
| Gate-Source Voltage | VGS | 20 | V | Tj=25°C; printed +20 | 1 | ||
| Drain Current | ID | 9 | A | TC=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 36 | A | Tj=25°C | 1 | ||
| Total Power Dissipation | PD | 75 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Turn-on Delay Time | td(on) | 10 | nS | VDD=100V,ID=9A,RG=12Ω | 2 | ||
| Rise Time | tr | 20 | nS | VDD=100V,ID=9A,RG=12Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 25 | nS | VDD=100V,ID=9A,RG=12Ω | 2 | ||
| Total Gate Charge | Qg | 13 | nC | VDS=100V,ID=9A,VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 4 | nC | VDS=100V,ID=9A,VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 4.5 | nC | VDS=100V,ID=9A,VGS=10V | 2 | ||
| Input Capacitance | Ciss | 600 | PF | VDS=25V,VGS=0V,F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 90 | PF | VDS=25V,VGS=0V,F=1.0MHz | 2 |
CAD (KiCad official)
- Symbol:
HIRF630PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
hirf630pbf-etched.step/hirf630pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hirf630pbf.step/hirf630pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
f11f923675147d7e, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).