component
FDC5661N-F085
Public Made by Adomby adom
onsemi MOSFETs, TSOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDC5661N-F085
onsemi · MOSFETs · TSOT-23-6
FDC5661N-F085 from onsemi, in a TSOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal; drain-to-source voltage VDSS is 60 V maximum and continuous drain current is 4.3 A at VGS = 10 V. |
| 2 | D | passive | Drain terminal; drain-to-source voltage VDSS is 60 V maximum and continuous drain current is 4.3 A at VGS = 10 V. |
| 3 | G | input | Gate terminal; gate-to-source voltage VGS is limited to ±20 V. |
| 4 | S | passive | Source terminal; source-to-drain diode forward voltage VSD is 1.25 V maximum at ISD = 4.3 A. |
| 5 | D | passive | Drain terminal; drain-to-source voltage VDSS is 60 V maximum and continuous drain current is 4.3 A at VGS = 10 V. |
| 6 | D | passive | Drain terminal; drain-to-source voltage VDSS is 60 V maximum and continuous drain current is 4.3 A at VGS = 10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TSOT-23-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 60 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current Continuous | ID | 4.3 | A | VGS = 10 V | 1 | ||
| Drain Current Pulsed | ID | 20 | A | Pulsed | 1 | ||
| Single Pulse Avalanche Energy | EAS | 81 | mJ | Note 1: L = 14 mH, IAS = 3.4 A, Starting TJ = 25°C | 1 | ||
| Power Dissipation | PD | 1.6 | W | 1 | |||
| Operating and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Case | RJC | 30 | °C/W | 1 | |||
| Thermal Resistance Junction to Ambient | RJA | 78 | °C/W | TO-263, 1in2 Copper Pad Area | 1 | ||
| Drain to Source Breakdown Voltage | BVDSS | 60 | V | ID = 250 A, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 48 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current at TA = 150°C | IDSS | 250 | A | TA = 150°C | 2 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20 V | 2 | |
| Gate to Source Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VGS = VDS, ID = 250 A | 2 |
| Drain to Source On-Resistance | RDS(on) | 38 | 47 | m | VGS = 10 V, ID = 4.3 A | 2 | |
| Drain to Source On-Resistance | RDS(on) | 46 | 60 | m | VGS = 4.5 V, ID = 4 A | 2 | |
| Drain to Source On-Resistance at TJ = 150°C | RDS(on) | 69 | 86 | m | VGS = 10 V, ID = 4.3 A, TJ = 150°C | 2 | |
| Total Gate Charge at 10 V | Qg(TOT) | 14.5 | 19 | nC | VGS = 0 to 10 V, VDD = 30 V, ID = 4.3 A | 2 | |
| Turn-On Time | ton | 17.6 | ns | VGS = 10 V, VDD = 30 V, ID = 4.3 A, RGS = 6 | 2 | ||
| Turn-Off Time | toff | 36 | ns | 2 | |||
| Source to Drain Diode Voltage | VSD | 0.8 | 1.25 | V | ISD = 4.3 A | 2 | |
| Source to Drain Diode Voltage | VSD | 0.8 | 1 | V | ISD = 2.1 A | 2 | |
| Reverse Recovery Time | trr | 18.4 | 24 | ns | ISD = 4.3 A, dISD/dt = 100 A/s | 2 | |
| Reverse Recovery Charge | Qrr | 10 | 13 | nC | 2 | ||
| Input Capacitance | Ciss | 763 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 68 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 36 | pF | 2 | |||
| Gate Resistance | RG | 2.6 | f = 1 MHz | 2 | |||
| Gate to Source Gate Charge | Qgs | 2.4 | nC | VDD = 30 V, ID = 4.3 A | 2 | ||
| Gate to Drain Miller Charge | Qgd | 2.9 | nC | 2 | |||
| Turn-On Delay Time | td(on) | 7.2 | ns | 2 | |||
| Rise Time | tr | 1.6 | ns | 2 | |||
| Turn-Off Delay Time | td(off) | 19.3 | ns | 2 | |||
| Fall Time | tf | 3.1 | ns | 2 |
CAD (KiCad official)
- Symbol:
FDC5661N-F085 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
fdc5661n-f085-etched.step/fdc5661n-f085-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdc5661n-f085.step/fdc5661n-f085.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
d286aae047053eb6, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).