component
FDP18N50
Public Made by Adomby adom
onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDP18N50
onsemi · MOSFETs · TO-220
FDP18N50 from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±30 V maximum and RDS(on) of 0.265 Ω max at VGS = 10 V. |
| 2 | D | passive | Drain; rated for 500 V drain-source voltage and 18 A continuous current at TC = 25°C (72 A pulsed). |
| 3 | S | passive | Source; the body diode runs from source to drain, with 18 A continuous forward current and VSD of 1.4 V max at IS = 18 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | V | 1 | |||
| Drain Current Continuous | ID | 18 | A | TC = 25°C | 1 | ||
| Drain Current Continuous | ID | 10.8 | A | TC = 100°C | 1 | ||
| Drain Current Pulsed | IDM | 72 | A | Note 1 | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 945 | mJ | Note 2 | 1 | ||
| Avalanche Current | IAR | 18 | A | Note 1 | 1 | ||
| Repetitive Avalanche Energy | EAR | 23 | mJ | Note 1 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3 | 1 | ||
| Power Dissipation | PD | 235 | W | TC = 25°C | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/8" from Case for 5 Seconds | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.53 | °C/W | 1 | |||
| Thermal Resistance, Case-to-Sink | RθCS | 0.5 | °C/W | Typ. | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS = 0V, ID = 250µA | 2 | ||
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | 0.5 | V/°C | ID = 250µA, Referenced to 25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 500V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 400V, TC = 125°C | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30V, VDS = 0V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 250µA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.22 | 0.265 | Ω | VGS = 10V, ID = 9A | 2 | |
| Input Capacitance | Ciss | 2200 | 2860 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 2 | |
| Output Capacitance | Coss | 330 | 430 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 25 | 40 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 2 | |
| Turn-On Delay Time | td(on) | 55 | 120 | ns | VDD = 250V, ID = 18A, RG = 25Ω | 2 | |
| Turn-On Rise Time | tr | 165 | 340 | ns | VDD = 250V, ID = 18A, RG = 25Ω | 2 | |
| Turn-Off Delay Time | td(off) | 95 | 200 | ns | VDD = 250V, ID = 18A, RG = 25Ω | 2 | |
| Turn-Off Fall Time | tf | 90 | 190 | ns | VDD = 250V, ID = 18A, RG = 25Ω | 2 | |
| Total Gate Charge | Qg | 45 | 60 | nC | VDS = 400V, ID = 18A, VGS = 10V | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 18 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 72 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0V, IS = 18A | 2 | ||
| Forward Transconductance | gFS | 25 | S | VDS = 40V, ID = 9A (Note 4) | 2 | ||
| Gate-Source Charge | Qgs | 12.5 | nC | VDS = 400V, ID = 18A, VGS = 10V | 2 | ||
| Gate-Drain Charge | Qgd | 19 | nC | VDS = 400V, ID = 18A, VGS = 10V | 2 | ||
| Reverse Recovery Time | trr | 500 | ns | VGS = 0V, IS = 18A, dIF/dt =100A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 5.4 | µC | VGS = 0V, IS = 18A, dIF/dt =100A/µs | 2 |
CAD (KiCad official)
- Symbol:
FDP18N50 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
fdp18n50-etched.step/fdp18n50-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdp18n50.step/fdp18n50.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
0d0fcfa6830ddb1b, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).