BQ24308DSGR from Texas Instruments, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	IN	power_in	Input power, connect to external DC supply with an external 0.1μF (minimum) ceramic capacitor to VSS; absolute maximum 30 V and recommended operating range 3.3 V to 26 V.
2	VSS	power_in	Ground terminal, which must be connected to ground at all times.
3	PGATE	output	Gate drive for optional external P-FET for input reverse-polarity protection.
4	NC	unconnected	Do not connect to any external circuit; this pin may have internal connections used for test purposes.
5	CE	input	Chip enable input, active low, internally pulled down; when CE is high the input FET is off.
6	VBAT	power_in	Battery voltage sense input, connect to the pack positive terminal through a resistor.
7	ILIM	input	Input overcurrent threshold programming; an optional resistor to VSS increases the OCP threshold (RILIM max 31 kΩ).
8	OUT	power_out	Output terminal to the charging system, with an external 1μF (minimum) ceramic capacitor to VSS.
9	Thermal Pad	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	Texas Instruments
Package	WSON-8-EP(2x2)
Category	Power Supply Chip
Pins	9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Undervoltage lock-out threshold	VUVLO	2.5	2.7	2.8	V	CE= Low, VIN: 0 V → 3 V	5
Hysteresis on UVLO	VHYS-UVLO	200	260	300	mV	CE= Low, VIN: 3 V → 0 V	5
Operating current	IDD		410	500	μA	CE= Low, VIN = 5 V, no load on OUT pin	5
Standby current	ISTDBY		65	95	μA	CE= High, VIN = 5 V	5
Drop-out voltage IN to OUT	VDO		45	75	mV	CE = Low, VIN = 4 V, IOUT = 250 mA	5
Input overvoltage protection threshold	VOVP	6.1	6.3	6.5	V	CE= Low, VIN: 4 V to 10 V	5
Hysteresis on OVP	VHYS-OVP	20	60	110	mV	CE= Low, VIN: 10 V to 4 V	5
Output voltage	VO(REG)	4.85	5	5.15	V	CE = Low, VIN= 6 V, IOUT = 250 mA	5
Internal input overcurrent protection threshold	IOCP	630	700	770	mA	CE= Low, VIN = 5V, ILIM floating; TJ = 0°C to 125°C	5
Input overcurrent protection range	IOCP	630		1500	mA	CE = Low, VIN = 5V; TJ = 0°C to 125°C	5
OCP threshold accuracy	ΔIOCP	-10		10	%	TJ = 0°C to 125°C	5
OCP threshold accuracy	ΔIOCP	-13		13	%	TJ = -40°C to 125°C	5
Battery overvoltage protection threshold	BVOVP	4.3	4.35	4.4	V	CE = Low, VIN > 4.4 V, VVBAT: 4.2 V → 4.5 V	5
Hysteresis on BVOVP	VHYS-BOVP	200	275	320	mV	CE= Low, VIN > 4.4 V, VVBAT: 4.5 V → 3.9 V	5
Thermal shutdown temperature	TJ(OFF)	140	150		°C		5
Gate driver clamp voltage	VGCLMP	13	15	17	V	VIN > 17 V	5
Low-level input voltage	VIL	0		0.4	V		6
High-level input voltage	VIH	1.4			V		6
Low-level input current	IIL			1	μA		6
High-level input current	IIH			15	μA	VCE = 1.8 V	6
Deglitch time, input power detected	tDGL(PGOOD)		8		ms	CE = Low, VIN 0 V → 4 V, 1 µs rise-time, to output turning ON	5
Input OVP propagation delay	tPD(OVP)		0.2	1	μs	CE= Low, VIN 4 V → 10 V, 1µs rising time, to output turning OFF	5
Recovery time from input overvoltage	tON(OVP)		8		ms	CE = Low, VIN 10 V → 4V, 1 µs fall-time, to output turning ON	5
Blanking time, input overcurrent detected	tBLANK(OCP)		5		ms	CE= Low	5
Recovery time from input overcurrent	tREC(OCP)		64		ms	CE = Low	5
Input bias current on VBAT pin	IVBAT			10	nA	VVBAT = 4.4 V, TJ = 25°C	5
Deglitch time, battery overvoltage detected	tDGL(BOVP)		176		μs	CE= Low, VIN > 4.4 V, VVBAT 4.2 V → 4.5 V, 1 µs rising time, to output turning OFF	5
Thermal shutdown hysteresis	TJ(OFF-HYS)		20		°C		5
Input voltage IN, PGATE		-0.3		30	V	with respect to VSS	4
Input voltage OUT		-0.3		12	V	with respect to VSS	4
Input voltage ILIM, CE, VBAT		-0.3		7	V	with respect to VSS	4
Input current IN				2	A		4
Output current OUT				2	A		4
Output current PGATE				5	mA		4
Junction temperature	TJ	-40		150	°C		4
Storage temperature	Tstg	-65		150	°C		4
Input voltage range	VIN	3.3		26	V		4
Input current, IN pin	IIN			1.5	A		4
Output current, OUT pin	IOUT			1.5	A		4
OCP programming resistor	RILIM			31	kΩ		4
Junction temperature	TJ	-40		125	°C		4
Junction-to-ambient thermal resistance	RθJA		58.6		°C/W	DSG (WSON) 8 pins	4
Junction-to-case (top) thermal resistance	RθJC(top)		67.9		°C/W	DSG (WSON) 8 pins	4
Junction-to-board thermal resistance	RθJB		29.7		°C/W	DSG (WSON) 8 pins	4
Junction-to-case (bottom) thermal resistance	RθJC(bot)		7.6		°C/W	DSG (WSON) 8 pins	4

CAD (KiCad official)

Symbol: BQ24308DSGR
Footprint: Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm
3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
3D model files: bq24308dsgr-etched.step / bq24308dsgr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bq24308dsgr.step / bq24308dsgr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Texas Instruments datasheet (27 pp, sha256 c58cf49318e7c538, retrieved 2026-10-31, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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BQ24308DSGR

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