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FMMT625TA-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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FMMT625TA-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

FMMT625TA-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; emitter-base voltage limited to 5 V (VEBO) and hFE specified from 1 mA to 1 A at VCE=10 V.
2 E passive Emitter; carries the full collector current of up to 1 A continuous (IC max) and is the NPN emitter shown with the arrow pointing out.
3 C passive Collector; the single lead on one side of the package, rated 150 V VCEO, 170 V VCBO and 1 A continuous collector current.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 170 V IC=100µA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 150 V IC=10mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE=100µA, IC=0 2
Collector cut-off current ICBO 0.1 µA VCB=150V, IE=0 2
Emitter cut-off current IEBO 0.1 µA VEB=4V, IC=0 2
DC current gain hFE(1) 100 VCE=10V, IC 1mA 2
DC current gain hFE(2) 100 300 VCE=10V, IC 250mA 2
DC current gain hFE(3) 50 VCE=10V, IC 500mA 2
DC current gain hFE(4) 10 VCE=10V, IC 1A 2
Collector-emitter saturation voltage VCE(sat)(1) 0.2 V IC=250mA, IB 25mA 2
Collector-emitter saturation voltage VCE(sat)(2) 0.3 V IC=500mA, IB 50mA 2
Base-emitter turn-on voltage VBE(on) 1 V VCE=10V, IC 500mA 2
Base-emitter saturation voltage VBE(sat) 1 V IC=500mA, IB=50mA 2
Transition frequency fT 100 MHz VCE=10V,IC 2
Collector output capacitance Cob 10 pF VCB=10V,IE 2
Collector-base voltage VCBO 170 V 1
Collector-emitter voltage VCEO 150 V 1
Emitter-base voltage VEBO 5 V 1
Collector current IC 1 A 1
Collector power dissipation PC 250 mW 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -55 150 °C 1
Thermal resistance from junction to ambient RθJA 500 °C/W 1

CAD (KiCad official)

  • Symbol: FMMT625TA-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fmmt625ta-hxy-etched.step / fmmt625ta-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fmmt625ta-hxy.step / fmmt625ta-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 0e39037c4a01238f, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF