component
BU508AW
Public Made by Adomby adom
STMicroelectronics Bipolar (BJT), TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBU508AW
STMicroelectronics · Bipolar (BJT) · TO-247
BU508AW from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; base current IB is rated to 4 A maximum and VEBO to 9 V. |
| 2 | C | passive | Collector of the NPN transistor; VCES is 1500 V, VCEO is 700 V, and IC is 8 A continuous (15 A peak, tP < 5 ms). |
| 3 | E | passive | Emitter of the NPN transistor, the common return for the base drive and collector current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage (VBE = 0) | VCES | 1500 | V | VBE = 0 | 3 | ||
| Collector-emitter voltage (IB = 0) | VCEO | 700 | V | IB = 0 | 3 | ||
| Collector-base voltage (IC = 0) | VEBO | 9 | V | IC = 0 | 3 | ||
| Collector current | IC | 8 | A | 3 | |||
| Collector peak current | ICM | 15 | A | tP < 5ms | 3 | ||
| Base current | IB | 4 | A | 3 | |||
| Total dissipation | PTOT | 125 | W | Tc = 25°C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Max. operating junction temperature | TJ | 150 | °C | 3 | |||
| Thermal resistance junction-case | Rthj-case | 1 | °C/W | 3 | |||
| Collector cut-off current (VBE = 0) | ICES | 0.2 | mA | VCE = 1500V | 4 | ||
| Collector cut-off current (VBE = 0) | ICES | 2 | mA | VCE = 1500V; TC = 125°C | 4 | ||
| Emitter cut-off current (IC = 0) | IEBO | 1 | mA | VEB = 9V | 4 | ||
| Collector-emitter saturation voltage | VCE(sat) | 1 | V | IC = 4.5A IB = 1.6A; pulsed: pulse duration = 300 ms, duty cycle 1.5 % | 4 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.1 | V | IC = 4.5A IB = 2A | 4 | ||
| DC current gain | hFE | 10 | IC = 0.1A VCE = 5V | 4 | |||
| DC current gain | hFE | 5 | 30 | IC = 4.5A VCE = 5V | 4 |
CAD (KiCad official)
- Symbol:
BU508AW - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
bu508aw-etched.step/bu508aw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bu508aw.step/bu508aw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (11 pp, sha256
74d16a9ca70e669f, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).