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TK110P10PL

Public Made by Adom

by adom

TOSHIBA MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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TK110P10PL

TOSHIBA · MOSFETs · TO-252-2(DPAK)

TK110P10PL from TOSHIBA, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; the gate-source voltage is rated ±20 V (VGSS absolute maximum rating).
2 Drain (heatsink) passive Drain terminal, also the heatsink tab of the DPAK package; the drain-source voltage is rated 100 V (VDSS absolute maximum rating).
3 Source passive Source terminal of the MOSFET, the reference for the gate-source voltage (VGSS ±20 V).

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-252-2(DPAK)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 100 V 2
Gate-source voltage VGSS -20 20 V 2
Drain current (DC) ID 40 A Tc = 25 °C 2
Drain current (DC), silicon limit ID 60 A Silicon limit (Notes 1, 2) 2
Drain current (pulsed) IDP 160 A t = 100 µs (Note 1) 2
Power dissipation PD 75 W Tc = 25 °C (Note 1) 2
Single-pulse avalanche energy EAS 18 mJ Note 3: VDD = 80 V, Tch = 25 °C (initial), L = 8.7 µH, IAS = 40 A 2
Single-pulse avalanche current IAS 40 A Note 3 2
Channel temperature Tch 175 °C 2
Storage temperature Tstg -55 175 °C 2
Channel-to-case thermal resistance Rth(ch-c) 2 °C/W Tc = 25 °C 2
Gate leakage current IGSS -0.1 0.1 µA VGS = ±20 V, VDS = 0 V 2
Drain cut-off current IDSS 10 µA VDS = 100 V, VGS = 0 V 2
Drain-source breakdown voltage V(BR)DSS 100 V ID = 10 mA, VGS = 0 V 2
Drain-source breakdown voltage (VGS reverse bias) V(BR)DSX 65 V ID = 10 mA, VGS = -20 V 2
Gate threshold voltage Vth 1.5 2.5 V VDS = 10 V, ID = 0.3 mA 2
Drain-source on-resistance RDS(ON) 16 mΩ VGS = 4.5 V, ID = 16 A 2
Drain-source on-resistance RDS(ON) 10.6 mΩ VGS = 10 V, ID = 20 A 2
Reverse drain current (pulsed) IDRP 160 A t = 100 µs 3
Diode forward voltage VDSF -1.5 V IDR = 40 A, VGS = 0 V 3

CAD (KiCad official)

  • Symbol: TK110P10PL
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: tk110p10pl-etched.step / tk110p10pl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tk110p10pl.step / tk110p10pl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (8 pp, sha256 4a26700da730e88b, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF