component
G20N06D52
Public Made by Adomby adom
GOFORD MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownG20N06D52
GOFORD · MOSFETs · DFN5x6-8L
G20N06D52 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 60V, ID 20A). |
| 2 | G1 | input | Gate of MOSFET 1; VGS rated ±20V, threshold 1V min to 2.5V max. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 60V, ID 20A). |
| 4 | G2 | input | Gate of MOSFET 2; VGS rated ±20V, threshold 1V min to 2.5V max. |
| 5 | D2 | passive | Drain of MOSFET 2; VDS 60V max, pulsed drain current 80A. |
| 6 | D2 | passive | Drain of MOSFET 2; VDS 60V max, pulsed drain current 80A. |
| 7 | D1 | passive | Drain of MOSFET 1; VDS 60V max, pulsed drain current 80A. |
| 8 | D1 | passive | Drain of MOSFET 1; VDS 60V max, pulsed drain current 80A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Continuous Drain Current | ID | 20 | A | 1 | |||
| Pulsed Drain Current | IDM | 80 | A | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Power Dissipation | PD | 48 | W | 1 | |||
| Single pulse avalanche energy | EAS | 36 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 50 | ºC/W | 1 | |||
| Maximum Junction-to-Case Thermal Resistance | RthJC | 2.6 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 60V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 26 | 30 | mΩ | VGS = 10V, ID = 10A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 30 | 40 | mΩ | VGS = 4.5V, ID = 10A | 2 | |
| Continuous Body Diode Current | IS | 20 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 10A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
G20N06D52 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
g20n06d52-etched.step/g20n06d52-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g20n06d52.step/g20n06d52.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
04b30dcf38de942f, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).