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SI2324DS-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2324DS-T1-GE3
Vishay Intertech · MOSFETs · SOT-23
SI2324DS-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet gives VGS = ±20 V as the gate-source voltage limit. |
| 2 | S | passive | Source terminal; the datasheet gives a continuous source-drain diode current IS of 2.1 A at TC = 25 °C. |
| 3 | D | passive | Drain terminal; the datasheet gives VDS = 100 V and a continuous drain current ID of 2.3 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 2.3 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 1.8 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 1.6 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | 1.3 | A | TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 5 | A | t = 300 µs | 1 | ||
| Continuous Source-Drain Diode Current | IS | 2.1 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 1 | A | TA = 25 °C | 1 | ||
| Single Pulse Avalanche Current | IAS | 5 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1.25 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 2.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 75 | 100 | °C/W | t = 5 s | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 40 | 50 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Ambient steady state | RthJA | 166 | °C/W | Steady state (note d) | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VDS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.2 | 2.8 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 5 | A | VDS 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.195 | 0.234 | Ω | VGS = 10 V, ID = 1.5 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.222 | 0.267 | Ω | VGS = 6 V, ID = 1 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.231 | 0.278 | Ω | VGS = 4.5 V, ID = 0.5 A | 2 | |
| Total Gate Charge | Qg | 5.2 | 10.4 | nC | VDS = 50 V, VGS = 10 V, ID = 1.6 A | 2 | |
| Total Gate Charge | Qg | 2.9 | 5.8 | nC | VDS = 50 V, VGS = 4.5 V, ID = 1.6 A | 2 | |
| Gate Resistance | Rg | 0.3 | 1.4 | 2.8 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 30 | 45 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 | 2 | |
| Rise Time | tr | 26 | 39 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 17 | 26 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 | 2 | |
| Fall Time | tf | 12 | 20 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 | 2 | |
| Turn-On Delay Time | td(on) | 6 | 12 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 10 V, Rg = 1 | 2 | |
| Rise Time | tr | 10 | 20 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 10 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 10 | 20 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 10 V, Rg = 1 | 2 | |
| Fall Time | tf | 6 | 12 | ns | VDD = 50 V, RL = 39, ID = 1.3 A, VGEN = 10 V, Rg = 1 | 2 | |
| Continuous Source-Drain Diode Current | IS | 2.1 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 20 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 1.3 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 22 | 33 | ns | IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 21 | 32 | nC | IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
SI2324DS-T1-GE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2324ds-t1-ge3-etched.step/si2324ds-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2324ds-t1-ge3.step/si2324ds-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
68412c3a6c68d6af, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).