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Contents

README

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SQ3410EV-T1_GE3

Vishay Intertech · MOSFETs · TSOP-6

SQ3410EV-T1_GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal; pins 1, 2, 5 and 6 are the drain and are connected together internally, with VDS rated 30 V and continuous drain current 8 A at TC = 25 °C.
2 D passive Drain terminal; pins 1, 2, 5 and 6 are the drain and are connected together internally, with VDS rated 30 V and continuous drain current 8 A at TC = 25 °C.
3 G input Gate terminal; gate-source voltage is rated ±20 V per the absolute maximum ratings.
4 S passive Source terminal; continuous source (diode conduction) current IS is rated 6.3 A.
5 D passive Drain terminal; pins 1, 2, 5 and 6 are the drain and are connected together internally, with VDS rated 30 V and continuous drain current 8 A at TC = 25 °C.
6 D passive Drain terminal; pins 1, 2, 5 and 6 are the drain and are connected together internally, with VDS rated 30 V and continuous drain current 8 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TSOP-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 8 A TC = 25 °C 1
Continuous Drain Current ID 6.8 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS 6.3 A 1
Pulsed Drain Current IDM 32 A Pulse test; pulse width 300 μs, duty cycle 2 % 1
Single Pulse Avalanche Current IAS 22 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 24 mJ 1
Maximum Power Dissipation PD 5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient RthJA 110 °C/W PCB mount, 1 in square FR-4 PCB 1
Junction-to-Foot (Drain) RthJF 30 °C/W 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1.5 2 2.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V, VDS = 30 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = 30 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 150 μA VGS = 0 V, VDS = 30 V, TJ = 175 °C 2
On-State Drain Current ID(on) 10 A VGS = 10 V, VDS ≥ 5 V 2
Drain-Source On-State Resistance RDS(on) 0.014 0.0175 Ω VGS = 10 V, ID = 5 A 2
Drain-Source On-State Resistance RDS(on) 0.03 Ω VGS = 10 V, ID = 5 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.036 Ω VGS = 10 V, ID = 5 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.017 0.0213 Ω VGS = 4.5 V, ID = 4 A 2
Input Capacitance Ciss 804 1005 pF VGS = 0 V, VDS = 15 V, f = 1 MHz 2
Output Capacitance Coss 175 219 pF VGS = 0 V, VDS = 15 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 68 85 pF VGS = 0 V, VDS = 15 V, f = 1 MHz 2
Total Gate Charge Qg 14 21 nC VGS = 10 V, VDS = 15 V, ID = 5 A 2
Gate Resistance Rg 1.5 3.91 7 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 9 14 ns VDD = 15 V, RL = 3, ID 5 A, VGEN = 10 V, Rg = 1 2
Rise Time tr 12 18 ns VDD = 15 V, RL = 3, ID 5 A, VGEN = 10 V, Rg = 1 2
Turn-Off Delay Time td(off) 20 30 ns VDD = 15 V, RL = 3, ID 5 A, VGEN = 10 V, Rg = 1 2
Fall Time tf 7 11 ns VDD = 15 V, RL = 3, ID 5 A, VGEN = 10 V, Rg = 1 2
Pulsed Current ISM 32 A 2
Forward Voltage VSD 0.8 1.2 V IF = 5 A, VGS = 0 V 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper pins 1,2,5, and 6. The copper plane connects the drain pins 8

CAD (KiCad official)

  • Symbol: SQ3410EV-T1_GE3
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: sq3410ev-t1-ge3-etched.step / sq3410ev-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq3410ev-t1-ge3.step / sq3410ev-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (11 pp, sha256 a36ab3a12c53b21b, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF