component
HDTC114EU3T106
Public Made by Adomby adom
HXY MOSFET Digital Transistors, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHDTC114EU3T106
HXY MOSFET · Digital Transistors · SOT-323
HDTC114EU3T106 from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IN | input | Input pin rated for VIN of -10 to +40 V, with VI(off) at most 0.5 V (VCC=5V, IO=100µA) and VI(on) at least 3 V (VO=0.3V, IO=10mA). |
| 2 | GND | power_in | Ground reference pin; the datasheet states no separate electrical limit for this pin. |
| 3 | OUT | output | Open-collector output rated for IO 50 mA continuous and ICM 100 mA peak, with VO(on) at most 0.3 V at IO/II = 10mA/0.5mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input resistance | R1 | 7 | 10 | 13 | kΩ | 1 | |
| Resistance ratio | R2/R1 | 0.8 | 1 | 1.2 | 1 | ||
| Input voltage (on) | VI(on) | 3 | V | VO=0.3V,IO=10mA | 1 | ||
| Input voltage (off) | VI(off) | 0.5 | V | VCC=5V,IO=100µA | 1 | ||
| Output voltage (on) | VO(on) | 0.3 | V | IO/II=10mA/0.5mA | 1 | ||
| Input current | II | 0.88 | mA | VI=5V | 1 | ||
| Output current (off) | IO(off) | 0.5 | μA | VCC=50V,VI=0 | 1 | ||
| DC current gain | GI | 30 | VO=5V,IO=5mA | 1 | |||
| Transition frequency | fT | 250 | MHz | VO=10V,IO=5mA,f=100MHz | 1 | ||
| Input voltage | VIN | -10 | 40 | V | Ta=25 | 1 | |
| Output current | IO | 50 | mA | Ta=25 | 1 | ||
| Power dissipation | PD | 200 | mW | Ta=25 | 1 | ||
| Peak collector current | ICM | 100 | mA | Ta=25 | 1 | ||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | Ta=25 | 1 |
CAD (KiCad official)
- Symbol:
HDTC114EU3T106 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
hdtc114eu3t106-etched.step/hdtc114eu3t106-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hdtc114eu3t106.step/hdtc114eu3t106.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
a6ae64177dc17937, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).