component
S9013-H
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownS9013-H
Yangzhou Yangjie Elec Tech · Bipolar (BJT) · SOT-23
S9013-H from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 5 V, hFE(1) 120 to 400 at VCE=1V, IC=50mA. |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base breakdown voltage min 5 V at IE=0.1mA. |
| 3 | C | passive | Collector of the NPN transistor; VCBO 40 V, VCEO 25 V, IC max 500 mA, PC 300 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | VCBO | 40 | V | IC=0.1mA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | VCEO* | 25 | V | IC=1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | VEBO | 5 | V | IE=0.1mA,IC=0 | 1 | ||
| Collector-Base cut-off current | ICBO | 0.1 | uA | VCB=40V,IE=0 | 1 | ||
| Collector-Emitter cut-off current | ICEO | 0.1 | uA | VCE=20V, IB =0 | 1 | ||
| Emitter-Base cut-off current | IEBO | 0.1 | uA | VEB=5V, IC =0 | 1 | ||
| DC current gain | hFE（1） | 120 | 400 | V | VCE=1V,IC=50mA | 1 | |
| DC current gain | hFE（2） | 40 | V | VCE=1V,IC=500mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.6 | V | IC=500mA,IB=50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=500mA,IB=50mA | 1 | ||
| Transition frequency | fT | 150 | MHz | VCE=6V,IC=20mA,f=30MHz | 1 | ||
| DC current gain rank H (classification of hFE(1)) | hFE | 200 | 350 | 2 | |||
| Collector-Base Voltage | VCBO | 40 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 25 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current | IC | 500 | mA | 1 | |||
| Collector Power Dissipation | PC | 300 | mW | 1 | |||
| Operation Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance From Junction To Ambient | RθJA | 416 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
S9013-H - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
s9013-h-etched.step/s9013-h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s9013-h.step/s9013-h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (4 pp, sha256
2a763fd632a3de19, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).