component
IRFH5206TR2PBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIRFH5206TR2PBF-VB
VBsemi Elec · MOSFETs · DFN5x6-8
IRFH5206TR2PBF-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1 is marked by the PIN1 dot), with VDS rated at 60 V and continuous drain current of 80 A at TC = 25 °C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with VGS limited to ±20 V relative to gate. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with continuous source current (diode conduction) of 70 A. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, with absolute maximum gate-source voltage of ±20 V and gate threshold voltage of 2.5 V min to 4 V max. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, with drain-source breakdown voltage of 60 V minimum. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, with pulsed drain current rating of 100 A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, with RDS(on) of 0.006 ohm typical at VGS = 10 V and ID = 20 A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, with operating junction temperature range of -55 to 175 °C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
IRFH5206TR2PBF-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
irfh5206tr2pbf-vb-etched.step/irfh5206tr2pbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfh5206tr2pbf-vb.step/irfh5206tr2pbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
8cb8a63b88e1f185, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).