component
BSS127G-AE3-R
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS127G-AE3-R
UTC(Unisonic Tech) · MOSFETs · SOT-23
BSS127G-AE3-R from UTC(Unisonic Tech), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin of the N-channel MOSFET; maximum gate-source voltage is ±20 V with threshold VGS(TH) of 1.4 V min, 2.0 V typ, 2.6 V max at ID=8 µA. |
| 2 | S | passive | Source pin of the N-channel MOSFET; continuous source-drain diode current is 0.016 A at TA=25°C. |
| 3 | D | passive | Drain pin of the N-channel MOSFET; drain-source voltage is 600 V max and continuous drain current is 0.021 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | ID=250µA, VGS=0V | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 10 | 100 | nA | VGS=+20V, VDS=0V | 2 | |
| Gate-Source Leakage Current Reverse | IGSS | -100 | -10 | nA | VGS=-20V, VDS=0V | 2 | |
| Drain-Source Leakage Current | ID(OFF) | 0.1 | µA | VGS=0V, VDS=600V, TJ=25°C | 2 | ||
| Drain-Source Leakage Current | ID(OFF) | 10 | µA | VGS=0V, VDS=600V, TJ=150°C | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 1.4 | 2 | 2.6 | V | VDS=VGS, ID=8µA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) | 330 | 600 | Ω | VGS=4.5V, ID=0.016A | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 310 | 500 | Ω | VGS=10V, ID=0.016A | 2 | |
| Forward Transconductance | gFS | 0.007 | 0.015 | S | /VDS/>2/ID/RDS(ON)MAX, ID=0.01A | 2 | |
| Input Capacitance | CISS | 21 | 28 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | |
| Output Capacitance | COSS | 2.4 | 3 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | |
| Reverse Transfer Capacitance | CRSS | 1 | 1.5 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | |
| Total Gate Charge | QG | 0.65 | 1 | nC | VGS=0~10V, VDS=300V, ID=0.01A | 2 | |
| Gate to Source Charge | QGS | 0.07 | 0.1 | nC | VGS=0~10V, VDS=300V, ID=0.01A | 2 | |
| Gate to Drain Charge | QGD | 0.31 | 0.5 | nC | VGS=0~10V, VDS=300V, ID=0.01A | 2 | |
| Turn-ON Delay Time | tD(ON) | 6.1 | 19 | ns | VDD=300V, VGS=10V, ID=0.01A, RG=6Ω | 2 | |
| Rise Time | tR | 9.7 | 14.5 | ns | VDD=300V, VGS=10V, ID=0.01A, RG=6Ω | 2 | |
| Turn-OFF Delay Time | tD(OFF) | 14 | 21 | ns | VDD=300V, VGS=10V, ID=0.01A, RG=6Ω | 2 | |
| Fall-Time | tF | 115 | 170 | ns | VDD=300V, VGS=10V, ID=0.01A, RG=6Ω | 2 | |
| Drain-Source Diode Forward Voltage | VSD | 0.82 | 1.2 | V | IF=0.016A, VGS=0V, TJ=25°C | 2 | |
| Body Diode Reverse Recovery Time | trr | 160 | 240 | ns | VR=300V, IF=0.016A, dIF/dt=100A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 13.2 | 19.8 | µC | VR=300V, IF=0.016A, dIF/dt=100A/µs | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 0.016 | A | TA=25°C | 2 | ||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 0.09 | A | TA=25°C | 2 | ||
| Gate Plateau Voltage | Vplateau | 3.56 | V | VGS=0~10V, VDS=300V, ID=0.01A | 2 | ||
| Drain-Source Voltage | VDSS | 600 | V | TA=25°C | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA=25°C | 2 | |
| Drain Current Continuous | ID | 0.021 | A | TA=25°C | 2 | ||
| Drain Current Continuous | ID | 0.017 | A | TA=70°C | 2 | ||
| Drain Current Pulsed | IDM | 0.09 | A | TA=25°C | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 6 | kV/µs | TA=25°C | 2 | ||
| Power Dissipation | PD | 0.3 | W | TA=25°C | 2 | ||
| Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Junction to Ambient Thermal Resistance | θJA | 325 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
BSS127G-AE3-R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss127g-ae3-r-etched.step/bss127g-ae3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss127g-ae3-r.step/bss127g-ae3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256
ce8c8f52d22b1a9e, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).