component
SPB17N80C3
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSPB17N80C3
Infineon Technologies · MOSFETs · TO-263
SPB17N80C3 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; static gate-source voltage limit is ±20 V (±30 V AC, f>1 Hz), with threshold voltage 2.1 V min, 3 V typ, 3.9 V max. |
| 2 | D | passive | Drain pin, also connected to the tab; the device is rated for 800 V drain-source and 17 A continuous drain current at TC=25 °C. |
| 3 | S | passive | Source pin; carries the continuous diode forward current of 17 A at TC=25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 800 | V | VGS=0 V, ID=250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | 2.1 | 3 | 3.9 | V | VDS=VGS, ID=1.0 mA | 2 |
| Zero gate voltage drain current | IDSS | 25 | µA | VDS=800 V, VGS=0 V, Tj=25 °C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V, VDS=0 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.25 | 0.29 | Ω | VGS=10 V, ID=11 A, Tj=25 °C | 2 | |
| Thermal resistance, junction-case | RthJC | 0.55 | K/W | 2 | |||
| Thermal resistance, junction-ambient, minimal footprint | RthJA | 62 | K/W | SMD version, device on PCB, minimal footprint | 2 | ||
| Soldering temperature, reflow | Tsold | 260 | °C | MSL1; 10s | 2 | ||
| Diode forward voltage | VSD | 1 | 1.2 | V | VGS=0 V, IF=IS, Tj=25 °C | 3 | |
| Gate charge total | Qg | 88 | 117 | nC | VDD=640 V, ID=17 A, VGS=0 to 10 V | 3 | |
| Continuous drain current | ID | 17 | A | TC=25 °C | 1 | ||
| Continuous drain current | ID | 11 | A | TC=100 °C | 1 | ||
| Pulsed drain current | ID,pulse | 51 | A | TC=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 670 | mJ | ID=3.4 A, VDD=50 V | 1 | ||
| Avalanche energy, repetitive | EAR | 0.5 | mJ | ID=17 A, VDD=50 V | 1 | ||
| Avalanche current, repetitive | IAR | 17 | A | 1 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0…640 V | 1 | ||
| Gate source voltage, static | VGS | -20 | 20 | V | static | 1 | |
| Gate source voltage, AC | VGS | -30 | 30 | V | AC (f >1 Hz) | 1 | |
| Power dissipation | Ptot | 227 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Continuous diode forward current | IS | 17 | A | TC=25 °C | 2 | ||
| Diode pulse current | IS,pulse | 51 | A | 2 | |||
| Reverse diode dv/dt | dv/dt | 4 | V/ns | 2 | |||
| Avalanche breakdown voltage | V(BR)DS | 870 | V | VGS=0 V, ID=17 A | 2 | ||
| Zero gate voltage drain current | IDSS | 150 | µA | VDS=800 V, VGS=0 V, Tj=150 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.67 | Ω | VGS=10 V, ID=11 A, Tj=150 °C | 2 | ||
| Gate resistance | RG | 0.85 | Ω | f =1 MHz, open drain | 2 | ||
| Thermal resistance, junction-ambient, 6 cm2 cooling area | RthJA | 35 | K/W | SMD version, device on PCB, 6 cm2 cooling area | 2 | ||
| Input capacitance | Ciss | 2300 | pF | VGS=0 V, VDS=100 V, f =1 MHz | 3 | ||
| Output capacitance | Coss | 94 | pF | VGS=0 V, VDS=100 V, f =1 MHz | 3 | ||
| Effective output capacitance, energy related | Co(er) | 72 | pF | VGS=0 V, VDS=0 V to 480 V | 3 | ||
| Effective output capacitance, time related | Co(tr) | 210 | pF | VGS=0 V, VDS=0 V to 480 V | 3 | ||
| Turn-on delay time | td(on) | 25 | ns | VDD=400 V, VGS=0/10 V, ID=17 A, RG=4.7 Ω, Tj=125°C | 3 | ||
| Rise time | tr | 15 | ns | VDD=400 V, VGS=0/10 V, ID=17 A, RG=4.7 Ω, Tj=125°C | 3 | ||
| Turn-off delay time | td(off) | 72 | ns | VDD=400 V, VGS=0/10 V, ID=17 A, RG=4.7 Ω, Tj=125°C | 3 | ||
| Fall time | tf | 12 | ns | VDD=400 V, VGS=0/10 V, ID=17 A, RG=4.7 Ω, Tj=125°C | 3 | ||
| Gate to source charge | Qgs | 12 | nC | VDD=640 V, ID=17 A, VGS=0 to 10 V | 3 | ||
| Gate to drain charge | Qgd | 45 | nC | VDD=640 V, ID=17 A, VGS=0 to 10 V | 3 | ||
| Gate plateau voltage | Vplateau | 5.5 | V | VDD=640 V, ID=17 A, VGS=0 to 10 V | 3 | ||
| Reverse recovery time | trr | 550 | ns | VR=400 V, IF=IS, diF/dt =100 A/µs | 3 | ||
| Reverse recovery charge | Qrr | 15 | µC | VR=400 V, IF=IS, diF/dt =100 A/µs | 3 | ||
| Peak reverse recovery current | Irrm | 51 | A | VR=400 V, IF=IS, diF/dt =100 A/µs | 3 |
CAD (KiCad official)
- Symbol:
SPB17N80C3 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
spb17n80c3-etched.step/spb17n80c3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);spb17n80c3.step/spb17n80c3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
fb9e9e4485b4b83b, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).