component
YFW50N06AD
Public Made by Adomby adom
YFW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYFW50N06AD
YFW · MOSFETs · TO-252
YFW50N06AD from YFW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive limit is VGS ±20 V, with threshold VGS(th) 1 V min to 2 V max at ID = 250 μA. |
| 2 | D | passive | Drain, connected to the center lead and the mounting tab; VDS is 60 V max and continuous ID is 50 A (100 A pulsed). |
| 3 | S | passive | Source; body-diode continuous current is 50 A max (100 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | Tc=25°C | 2 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Tc=25°C | 2 | |
| Continue Drain Current | ID | 50 | A | Tc=25°C | 2 | ||
| Pulsed Drain Current (Note1) | IDM | 100 | A | Tc=25°C | 2 | ||
| Power Dissipation | PD | 45 | W | Tc=25°C | 2 | ||
| Single Pulse Avalanche Energy (Note5) | EAS | 60 | mJ | Note5: Tj=25°C, VDD=30V, VG=10V, L=0.1mH, Rg=2 | 2 | ||
| Operating Temperature Range | TJ | 150 | °C | Tc=25°C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | Tc=25°C | 2 | |
| Thermal Resistance, Junction to Case | RθJC | 3 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS = 60 V, VGS = 0 V | 2 | ||
| Drain-Source Leakage Current (Tc=125°C) | IDSS | 100 | uA | VDS=60V,Tc=125°C | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ± 20 V, VDS = 0 V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2 | V | VDS = VGS , ID = 250 μA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 14 | 17 | mΩ | VGS = 10 V, ID = 20 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 18 | 22 | mΩ | VGS = 4.5 V, ID = 10 A | 2 | |
| Maximum Body-Diode Continuous Current (Note2) | IS | 50 | A | 3 | |||
| Maximum Body-Diode Pulsed Current | ISM | 100 | A | 3 | |||
| Drain-Source Diode Forward Voltage (Note3) | VSD | 1.2 | V | ISD = 30 A | 3 |
CAD (KiCad official)
- Symbol:
YFW50N06AD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
yfw50n06ad-etched.step/yfw50n06ad-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yfw50n06ad.step/yfw50n06ad.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (5 pp, sha256
d587b883f1381863, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).