component
S1815
Public Made by Adomby adom
FOSAN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownS1815
FOSAN · Bipolar (BJT) · SOT-23
S1815 from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor, shown at the bottom-left lead of the SOT-23 outline. |
| 2 | E | passive | Emitter of the NPN transistor, shown at the bottom-right lead; VEBO max 5 V. |
| 3 | C | passive | Collector of the NPN transistor, shown at the single top lead; IC max 150 mA, VCEO 50 V, VCBO 60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FOSAN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 60 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 50 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current | IC | 150 | mA | 1 | |||
| Power dissipation | PC | 200 | mW | Ta=25℃ | 1 | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-Base Breakdown Voltage | BVCBO | 60 | V | IC=100uA, IE=0 | 2 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 50 | V | IC=1mA, IB=0 | 2 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IE=100uA, IC=0 | 2 | ||
| Collector-Base Leakage Current | ICBO | 100 | nA | VCB=60V, IE=0 | 2 | ||
| Emitter-Base Leakage Current | IEBO | 100 | nA | VEB=5V, IC=0 | 2 | ||
| DC Current Gain | HFE | 120 | 400 | VCE=6V, IC=2mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC=100mA, IB=10mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1 | V | IC=100mA, IB=10mA | 2 | ||
| Transition Frequency | fT | 80 | MHZ | VCE=10V, IC=1mA | 2 | ||
| Thermal Resistance Junction-Ambient | RΘJA | 625 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
S1815 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
s1815-etched.step/s1815-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s1815.step/s1815.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FOSAN datasheet (4 pp, sha256
8e4668f421201ae8, retrieved 2026-10-09, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).