ST25DV64K-IER8T3 from STMicroelectronics, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	V_EH	power_out	Energy harvesting analog output pin that can power external components, referenced to VSS.
2	AC0	passive	Antenna coil connection to the RF interface (internal tuning capacitance 28.5 pF).
3	AC1	passive	Antenna coil connection to the RF interface (internal tuning capacitance 28.5 pF).
4	VSS	power_in	Ground, the reference for VCC supply voltage and V_EH analog output voltage.
5	SDA	bidirectional	I2C serial data, open drain output that needs a pull-up resistor to VCC and may be wire-OR'ed with other open drain or open collector signals on the bus.
6	SCL	input	I2C serial clock input that strobes all data in and out of the device, needing a pull-up resistor to VCC.
7	GPO	output	Interrupt output (open drain on the 8-pin packages) configurable on RF events such as field change, memory write, activity and Fast Transfer end.
8	VCC	power_in	Supply voltage pin connected to an external DC supply, 1.8 V to 5.5 V single supply.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	TSSOP-8
Category	RF & Radio
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Storage temperature (TSSOP8)	TSTG	-65		150	°C		138
I2C input or output voltage range	VIO	-0.5		6.5	V		138
Supply voltage VCC (absolute maximum)	VCC	-0.5		6.5	V		138
DC output current on pin SDA	IOL_MAX_SDA			5	mA	when equal to 0	138
DC output current on pin GPO open drain	IOL_MAX_GPO_OD			1.5	mA	when equal to 0	138
RF input voltage amplitude peak to peak between AC0 and AC1	VMAX_1			11	V	VSS pin left floating	138
AC voltage between AC0 and VSS, or AC1 and VSS	VMAX_2	-0.5		5.5	V		138
Electrostatic discharge voltage (human body model)	VESD			2000	V	All pins	138
I2C supply voltage	VCC	1.8		5.5	V		139
Ambient operating temperature, I2C (SO8N, TSSOP8)	TA	-40		125	°C	I2C interface	139
Ambient operating temperature, RF interface (Range 8)	TA	-40		105	°C	Range 8, RF interface	148
Input capacitance (SDA)	CIN			8	pF	SDA	139
Input capacitance (other pins)	CIN			6	pF	Other pins	139
Input leakage current (SCL, SDA)	ILI	-0.1	0.03	0.1	µA	VIN = VSS or VCC, device in Standby mode	141
Output leakage current (SDA)	ILO	-0.1	0.03	0.1	µA	SDA in Hi-Z, external voltage applied on SDA: VSS or VCC	141
Operating supply current, device select E2 address, read	ICC_E2		126	180	µA	VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns)	141
Operating supply current, device select E2 address, read	ICC_E2		230	260	µA	VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns)	141
Operating supply current, device select E2 address, read	ICC_E2		510	550	µA	VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns)	141
Operating supply current, device select MB address, read	ICC_MB		126	180	µA	VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns)	141
Operating supply current, device select MB address, read	ICC_MB		230	260	µA	VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns)	141
Operating supply current, device select MB address, read	ICC_MB		510	550	µA	VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns)	141
Operating supply current, device select E2 address, write	ICC0		120	310	µA	VCC = 1.8 V, fC = 1MHz (rise/fall time < 50 ns)	141
Operating supply current, device select E2 address, write	ICC0		120	350	µA	VCC = 3.3 V, fC = 1MHz (rise/fall time < 50 ns)	141
Operating supply current, device select E2 address, write	ICC0		140	450	µA	VCC = 5.5 V, fC = 1MHz (rise/fall time < 50 ns)	141
Static standby supply current after power ON or device select stop or time out	ICC1_PON		78	110	µA	LPD = 0, VCC = 1.8 V	142
Static standby supply current after power ON or device select stop or time out	ICC1_PON		82	110	µA	LPD = 0, VCC = 3.3 V	142
Static standby supply current after power ON or device select stop or time out	ICC1_PON		95	130	µA	LPD = 0, VCC = 5.5 V	142
Input low voltage (SDA, SCL)	VIL	-0.45			V	VCC = 1.8 V; max is 0.25 VCC as printed	142
Output low voltage SDA (1 MHz)	VOL_SDA		0.05	0.4	V	IOL = 1 mA, VCC = 1.8 V	142
Output low voltage SDA (1 MHz)	VOL_SDA		0.08	0.4	V	IOL = 2.1 mA, VCC = 3.3 V	142
Output low voltage SDA (1 MHz)	VOL_SDA		0.1	0.4	V	IOL = 3 mA, VCC = 5.5 V	142
Device select acknowledge (power-up)	VCC_Power_up		1.48	1.7	V	Device select acknowledge, fC = 100 kHz	142
SCL clock frequency	fC	0.05		1000	kHz	Test conditions per Table 243	143
Clock pulse width high	tCHCL	0.26		25000	µs	Test conditions per Table 243; max is tCHCL timeout	143
Clock pulse width low	tCLCH	0.5		25000	µs	Test conditions per Table 243; max is tCLCH timeout	143
I2C timeout on Start condition	tSTART_OUT	35			ms	Test conditions per Table 243	143
SDA (out) fall time	tDL1DL2	20		120	ns	Test conditions per Table 243	143
Data in set up time	tDXCX	0			ns	Test conditions per Table 243	143
Data in hold time	tCLDX	0			ns	Test conditions per Table 243	143
Data out hold time	tCLQX	100			ns	Test conditions per Table 243	143
Clock low to next data valid (access time)	tCLQV			450	ns	Test conditions per Table 243	143
Start condition set up time	tCHDX	250			ns	Test conditions per Table 243	143
Start condition hold time	tDLCL	0.25		35000	µs	Test conditions per Table 243; max is tDLCL timeout	144
Stop condition set up time	tCHDH	250			ns	Test conditions per Table 243	144
Time between Stop condition and next Start condition	tDHDL	500			ns	Test conditions per Table 243	144
I2C write time	tW			5.5	ms	Test conditions per Table 243; 1 to 4 bytes in same EEPROM page	144
Boot time, RF OFF and LPD = 0	tbootDC			0.6	ms	RF OFF and LPD = 0	144
Output low voltage (GPO open drain)	VOL_GPO_OD		0.28	0.4	V	IOL = 1 mA, VCC = 1.8 V	146
Output low voltage (GPO open drain)	VOL_GPO_OD		0.22	0.4	V	IOL = 1 mA, VCC = 3.3 V	146
Output low voltage (GPO open drain)	VOL_GPO_OD		0.21	0.4	V	IOL = 1 mA, VCC = 5.5 V	146
Output leakage (GPO open drain)	IL_GPO_OD	-0.15	0.06	0.15	µA	GPO in Hi-Z, external voltage applied on GPO: VSS or VCC	146
External RF signal frequency	fCC	13.553	13.56	13.567	MHz		147
Operating field according to ISO	H_ISO	150		5000	mA/m	Range 8, TA = -40 °C to 105 °C	147
10% carrier modulation index	MI	10		30	%	MI=(A-B)/(A+B); 150 mA/m > H_ISO > 1000 mA/m	147
100% carrier modulation index	MI	95		100	%	MI=(A-B)/(A+B)	147
Time for ST25DVxxx response	t1	318.6	320.9	323.3	µs	4352/FC	147
Internal tuning capacitor	CTUN	26.5	28.5	30.5	pF	f = 13.56 MHz	147
RF OFF time (chip reset)	tRF_OFF	2			ms	Chip reset	147

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
contacts			Grey color indicates the states where power is delivered on V_EH pin.	43

CAD (KiCad official)

Symbol: ST25DV64K-IER8T3
Footprint: Package_SO:TSSOP-8_4.4x3mm_P0.65mm
3D model: TSSOP-8 (KiCad packages3D, STEP)
3D model files: st25dv64k-ier8t3-etched.step / st25dv64k-ier8t3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); st25dv64k-ier8t3.step / st25dv64k-ier8t3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (200 pp, sha256 ab48d75d35c11396, retrieved 2026-11-05, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

ST25DV64K-IER8T3

Verified ST25DV64K-IER8T3

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README