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STF16N90K5
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STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTF16N90K5
STMicroelectronics · MOSFETs · TO-220FP
STF16N90K5 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±30 V absolute maximum and the gate is protected by built-in back-to-back Zener diodes with a gate-source breakdown voltage of at least 30 V. |
| 2 | D | passive | Drain terminal; drain-source breakdown voltage V(BR)DSS is 900 V minimum at VGS = 0 V and ID = 1 mA. |
| 3 | S | passive | Source terminal; the continuous source-drain current is rated at 15 A, and the insulation withstand voltage from all three leads to the external heat sink is 2.5 kV RMS. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Drain current (continuous) at TC = 25 °C | ID | 15 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) at TC = 100 °C | ID | 9 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 60 | A | Pulse width limited by safe operating area | 2 | ||
| Total power dissipation | PTOT | 30 | W | TC = 25 °C | 2 | ||
| Insulation withstand voltage (RMS) from all three leads to external heat sink | VISO | 2.5 | kV | t = 1 s; TC = 25 °C | 2 | ||
| Peak diode recovery voltage slope | dv/dt | 4.5 | V/ns | ISD ≤ 15 A, di/dt ≤ 100 A/μs; VDS (peak) ≤ V(BR)DSS, VDD = 450 V | 2 | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS ≤ 720 V | 2 | ||
| Operating junction temperature range | TJ | -55 | 150 | °C | 2 | ||
| Thermal resistance junction-case | Rthj-case | 4.1 | °C/W | 2 | |||
| Thermal resistance junction-amb | Rthj-amb | 62.5 | °C/W | 2 | |||
| Drain-source breakdown voltage | V(BR)DSS | 900 | V | VGS = 0 V, ID = 1 mA | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 900 V | 3 | ||
| Zero gate voltage drain current at TC = 125 °C | IDSS | 50 | µA | VGS = 0 V, VDS = 900 V, TC = 125 °C | 3 | ||
| Gate body leakage current | IGSS | -10 | 10 | µA | VDS = 0 V, VGS = ±20 V | 3 | |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100 µA | 3 |
| Static drain-source on-resistance | RDS(on) | 280 | 330 | mΩ | VGS = 10 V, ID = 7.5 A | 3 | |
| Input capacitance | Ciss | 1027 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Output capacitance | Coss | 106 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Reverse transfer capacitance | Crss | 1.6 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 | ||
| Equivalent capacitance energy related | Co(er) | 51 | pF | VGS = 0 V, VDS = 0 to 720 V | 3 | ||
| Equivalent capacitance time related | Co(tr) | 141 | pF | VGS = 0 V, VDS = 0 to 720 V | 3 | ||
| Intrinsic gate resistance | Rg | 1 | 4.9 | 9 | Ω | f = 1 MHz, ID = 0 A | 3 |
| Total gate charge | Qg | 29.7 | nC | VDD = 720 V, ID = 15 A, VGS = 0 to 10 V | 3 | ||
| Gate-source charge | Qgs | 7.3 | nC | VDD = 720 V, ID = 15 A, VGS = 0 to 10 V | 3 | ||
| Gate-drain charge | Qgd | 17.7 | nC | VDD = 720 V, ID = 15 A, VGS = 0 to 10 V | 3 | ||
| Turn-on delay time | td(on) | 28.8 | ns | VDD = 450 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V | 4 | ||
| Rise time | tr | 36 | ns | VDD = 450 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V | 4 | ||
| Turn-off delay time | td(off) | 46 | ns | VDD = 450 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V | 4 | ||
| Fall time | tf | 9.8 | ns | VDD = 450 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V | 4 | ||
| Source-drain current | ISD | 15 | A | 4 | |||
| Source-drain current (pulsed) | ISDM | 60 | A | Pulse width limited by safe operating area | 4 | ||
| Forward on voltage | VSD | 1.5 | V | ISD = 15 A, VGS = 0 V; pulsed, pulse duration = 300 µs, duty cycle 1.5% | 4 | ||
| Reverse recovery time | trr | 458 | ns | ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V | 4 | ||
| Reverse recovery charge | Qrr | 8.13 | µC | ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V | 4 | ||
| Reverse recovery current | IRRM | 35.5 | A | ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V | 4 | ||
| Reverse recovery time at Tj = 150 °C | trr | 546 | ns | ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 | ||
| Reverse recovery charge at Tj = 150 °C | Qrr | 9.2 | µC | ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 | ||
| Reverse recovery current at Tj = 150 °C | IRRM | 33.7 | A | ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 | ||
| Gate-source breakdown voltage | V(BR)GSO | 30 | V | IGS = ±1 mA, ID = 0 A | 4 |
CAD (KiCad official)
- Symbol:
STF16N90K5 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (12 pp, sha256
bb756a9be04316a4, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).