component
BQ25700ARSNR
Public Made by Adomby adom
Texas Instruments Battery Management, QFN-32(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownBQ25700ARSNR
Texas Instruments · Battery Management · QFN-32(4x4)
BQ25700ARSNR from Texas Instruments, in a QFN-32(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VBUS | power_in | Charger input voltage, recommended to be filtered with a 1 Ω and 0.47 µF (minimum) input low-pass filter; recommended operating range is 0 to 24 V. |
| 2 | ACN | input | Input current sense resistor negative input, with series resistors placed between the sense resistor and the filter cap; ACP-ACN differential is limited to −0.35 V to 0.35 V in recommended operation. |
| 3 | ACP | input | Input current sense resistor positive input, with series resistors placed between the sense resistor and the filter cap; ACP-ACN differential is limited to −0.35 V to 0.35 V in recommended operation. |
| 4 | CHRG_OK | output | Open-drain active-high indicator that a good power source is connected to the charger input, requiring a 10 kΩ pullup; recommended operating range is 0 to 6.5 V. |
| 5 | EN_OTG | input | Active-high enable for USB OTG mode, which additionally requires REG0x32[13] to be high; recommended operating range is 0 to 6.5 V. |
| 6 | ILIM_HIZ | input | Input current limit programming pin set by a resistor divider from a supply rail, where pin voltage below 0.4 V enters Hi-Z mode and above 0.8 V exits Hi-Z mode; recommended operating range is 0 to 6.5 V. |
| 7 | VDDA | power_in | Internal reference bias pin, fed from REGN through a 10 Ω resistor and decoupled with a 1 µF ceramic capacitor to power ground; recommended operating range is 0 to 6.5 V. |
| 8 | IADPT | bidirectional | Buffered adapter current output with V(IADPT) = 20 or 40 × (V(ACP) − V(ACN)), clamped below 3.3 V, and recommended operating range is 0 to 3.3 V. |
| 9 | IBAT | output | Buffered battery current output, with V(IBAT) = 8 or 16 × (V(SRP) − V(SRN)) for charge current, clamped below 3.3 V; the pin may be left floating if unused. |
| 10 | PSYS | output | Current-mode system power monitor output proportional to total adapter and battery power, clamped below 3.3 V; recommended operating range is 0 to 3.3 V. |
| 11 | PROCHOT | output | Active-low open-drain processor hot indicator that asserts a pulse when a PROCHOT profile event triggers, with recommended operating range 0 to 5.3 V. |
| 12 | SDA | bidirectional | SMBus open-drain data I/O requiring a 10 kΩ pullup; recommended operating range is 0 to 6.5 V. |
| 13 | SCL | input | SMBus clock input requiring a 10 kΩ pullup per SMBus specifications; recommended operating range is 0 to 6.5 V. |
| 14 | CMPIN | input | Input of the independent comparator, compared against an internal reference with output on CMPOUT; tie to ground if the comparator is unused. |
| 15 | CMPOUT | output | Open-drain output of the independent comparator that requires a pullup resistor to the pullup supply rail. |
| 16 | COMP1 | passive | Buck-boost converter compensation pin 1, with RC network per the bq25700 EVM schematic; recommended operating range is 0 to 6.5 V. |
| 17 | COMP2 | passive | Buck-boost converter compensation pin 2, with RC network per the bq25700 EVM schematic; recommended operating range is 0 to 6.5 V. |
| 18 | CELL_BATPRESZ | input | Battery cell selection pin for 1-4 cell setting, which also sets SYSOVP to 5 V (1-cell), 12 V (2-cell) or 19.5 V (3/4-cell), and a pull below VCELL_BATPRESZ_FALL indicates battery removal; recommended operating range is 0 to 6.5 V. |
| 19 | SRN | input | Charge current sense resistor negative input that also senses battery voltage, with recommended operating range 0 to 19.2 V and a 10 Ω series resistor for reverse-battery protection. |
| 20 | SRP | input | Charge current sense resistor positive input with a 0.1 µF differential filter to SRN, recommended operating range 0 to 19.2 V, and a 10 Ω series resistor for reverse-battery protection. |
| 21 | BATDRV | output | P-channel BATFET gate driver output that is shorted to VSYS to turn the BATFET off and sits 10 V below VSYS to fully enable it; recommended operating range is 0 to 19.2 V. |
| 22 | VSYS | input | Charger system voltage sense input, with the system regulation limit programmed in REG0x15() and REG0x3E(); recommended operating range is 0 to 19.2 V. |
| 23 | SW2 | passive | Boost-mode high-side MOSFET driver source, to be connected to the source of the high-side n-channel MOSFET; recommended operating range is −2 V to 24 V. |
| 24 | HIDRV2 | output | Boost-mode high-side power MOSFET (Q4) gate driver output; recommended operating range is 0 to 30 V with a differential limit of 0 to 6.5 V from SW2. |
| 25 | BTST2 | power_out | Boost-mode high-side driver bootstrap supply with a 0.047 µF capacitor to SW2 and an integrated bootstrap diode from REGN; recommended operating range is 0 to 30 V. |
| 26 | LODRV2 | output | Boost-mode low-side power MOSFET (Q3) gate driver output; recommended operating range is 0 to 6.5 V with absolute maximum of −4 V to 7 V at 2% duty cycle. |
| 27 | PGND | power_in | Device power ground. |
| 28 | REGN | power_out | 6 V linear regulator output supplied from VBUS or VSYS, active when VBUS is above VVBUS_CONVEN, which requires a 2.2 µF or 3.3 µF ceramic capacitor to power ground and supplies power-stage gate drive. |
| 29 | LODRV1 | output | Buck-mode low-side power MOSFET (Q2) gate driver output; recommended operating range is 0 to 6.5 V with absolute maximum of −4 V to 7 V at 2% duty cycle. |
| 30 | BTST1 | power_out | Buck-mode high-side driver bootstrap supply with a 0.047 µF capacitor between SW1 and BTST1 and an integrated bootstrap diode from REGN; recommended operating range is 0 to 30 V. |
| 31 | HIDRV1 | output | Buck-mode high-side power MOSFET (Q1) gate driver output; recommended operating range is 0 to 30 V with a differential limit of 0 to 6.5 V from SW1. |
| 32 | SW1 | passive | Buck-mode high-side MOSFET driver source, to be connected to the source of the high-side n-channel MOSFET; recommended operating range is −2 V to 24 V. |
| 33 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | QFN-32(4x4) |
| Category | Power Management (PMIC) |
| Pins | 33 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| SRN, SRP, ACN, ACP, VBUS, VSYS, BATDRV voltage | -0.3 | 30 | V | 8 | |||
| SW1, SW2 voltage | -2 | 30 | V | 8 | |||
| BTST1, BTST2, HIDRV1, HIDRV2 voltage | -0.3 | 36 | V | 8 | |||
| LODRV1, LODRV2 voltage | -4 | 7 | V | 2% duty cycle | 8 | ||
| HIDRV1, HIDRV2 voltage | -4 | 36 | V | 2% duty cycle | 8 | ||
| SW1, SW2 voltage | -4 | 30 | V | 2% duty cycle | 8 | ||
| SDA, SCL, REGN, CHRG_OK, CELL_BATPRESZ, ILIM_HIZ, LODRV1, LODRV2, VDDA, COMP1, COMP2, CMPIN, CMPOUT, EN_OTG voltage | -0.3 | 7 | V | 8 | |||
| PROCHOT voltage | -0.3 | 5.5 | V | 8 | |||
| IADPT, IBAT, PSYS voltage | -0.3 | 3.6 | V | 8 | |||
| BTST1-SW1, BTST2-SW2, HIDRV1-SW1, HIDRV2-SW2 differential voltage | -0.3 | 7 | V | 8 | |||
| SRP-SRN, ACP-ACN differential voltage | -0.5 | 0.5 | V | 8 | |||
| Junction temperature range | TJ | -40 | 155 | °C | 8 | ||
| Storage temperature | Tstg | -40 | 155 | °C | 8 | ||
| ACN, ACP, VBUS voltage | 0 | 24 | V | 8 | |||
| SRN, SRP, VSYS, BATDRV voltage | 0 | 19.2 | V | 8 | |||
| SW1, SW2 voltage | -2 | 24 | V | 8 | |||
| BTST1, BTST2, HIDRV1, HIDRV2 voltage | 0 | 30 | V | 8 | |||
| SDA, SCL, REGN, CHRG_OK, CELL_BATPRESZ, ILIM_HIZ, LODRV1, LODRV2, VDDA, COMP1, COMP2, CMPIN, CMPOUT voltage | 0 | 6.5 | V | 8 | |||
| PROCHOT voltage | 0 | 5.3 | V | 8 | |||
| IADPT, IBAT, PSYS voltage | 0 | 3.3 | V | 8 | |||
| BTST1-SW1, BTST2-SW2, HIDRV1-SW1, HIDRV2-SW2 differential voltage | 0 | 6.5 | V | 8 | |||
| SRP-SRN, ACP-ACN differential voltage | -0.35 | 0.35 | V | 8 | |||
| Junction temperature, operating | TJ | -40 | 125 | °C | 8 | ||
| Operating free-air temperature | TA | -40 | 85 | °C | 9 | ||
| Input voltage operating range | VINPUT_OP | 3.5 | 26 | V | 9 | ||
| System voltage regulation range, measured on VSYS | VSYSMAX_RNG | 1.024 | 19.2 | V | 9 | ||
| System voltage regulation accuracy (charge disable) | VSYSMAX_ACC | -2 | 2 | % | REG0x15() = 0x41A0H (16.800 V) | 9 | |
| Minimum system voltage regulation accuracy (charge enable, VBAT below REG0x3E() setting) | VSYSMIN_REG_ACC | -2 | 2 | % | REG0x3E() = 0x3000H (12.288 V) | 9 | |
| Battery voltage regulation range | VBAT_RNG | 1.024 | 19.2 | V | 9 | ||
| Battery voltage regulation accuracy (charge enable) (0°C to 85°C) | VBAT_REG_ACC | -0.5 | 0.5 | % | REG0x15() = 0x41A0H (16.8 V) | 9 | |
| Battery voltage regulation accuracy (charge enable) (0°C to 85°C) | VBAT_REG_ACC | -0.6 | 0.6 | % | REG0x15() = 0x20D0H (8.4 V) | 9 | |
| Battery voltage regulation accuracy (charge enable) (0°C to 85°C) | VBAT_REG_ACC | -1.1 | 1.2 | % | REG0x15() = 0x1060H (4.192 V) | 9 | |
| Charge current regulation accuracy, 10-mΩ current sensing resistor | ICHRG_REG_ACC | -3 | 2 | % | REG0x14() = 0x1000H (4096 mA), VBAT above 0x3E() setting (0°C to 85°C) | 10 | |
| Charge current regulation accuracy, 10-mΩ current sensing resistor | ICHRG_REG_ACC | -12 | 12 | % | REG0x14() = 0x0200H (512 mA), VBAT above 0x3E() setting (0°C to 85°C) | 10 | |
| Input current regulation accuracy (-40°C to 105°C) with 10-Ω ACP/ACN series resistor | IDPM_REG_ACC | 3820 | 4000 | mA | REG0x3F() = 0x4FFFH | 10 | |
| Voltage range for input current regulation | VIREG_DPM_RNG_ILIM | 1 | 4 | V | 10 | ||
| Input current regulation accuracy on ILIM_HIZ pin | IDPM_REG_ACC_ILIM | 3800 | 4000 | 4200 | mA | VILIM_HIZ = 2.6 V, with 10-Ω ACP/ACN series resistor | 10 |
| ILIM_HIZ pin leakage | ILEAK_ILIM | -1 | 1 | µA | 10 | ||
| Input voltage regulation range, voltage on VBUS | VIREG_DPM_RNG | 3.2 | 19.52 | V | 10 | ||
| Input voltage regulation accuracy | VDPM_REG_ACC | -2 | 2 | % | REG0x3D() = 0x3C80H (18688 mV) | 11 | |
| Input voltage regulation accuracy | VDPM_REG_ACC | -3 | 5 | % | REG0x3D() = 0x0500H (4480 mV) | 11 | |
| OTG voltage regulation accuracy | VOTG_REG_ACC | -2 | 2 | % | REG0x3B() = 0x3CC0H (20.032 V) | 11 | |
| OTG voltage regulation accuracy | VOTG_REG_ACC | -3 | 3 | % | REG0x3B() = 0x0240H (5.056 V) | 11 | |
| REGN regulator voltage (0 mA-60 mA) | VREGN_REG | 5.7 | 6 | 6.3 | V | VVBUS = 10 V | 11 |
| REGN voltage in drop out mode | VDROPOUT | 3.8 | 4.3 | 4.6 | V | VVBUS = 5 V, ILOAD = 20 mA | 11 |
| REGN current limit when converter is enabled | IREGN_LIM_Charging | 50 | 65 | mA | VVBUS = 10 V, force VREGN = 4 V | 11 | |
| Quiescent current, system powered by battery, BATFET on (low power mode) | IBAT_BATFET_ON | 22 | 45 | µA | VBAT = 18 V, REG0x12[15] = 1, in low power mode | 11 | |
| Quiescent current, system powered by battery, BATFET on | IBAT_BATFET_ON | 105 | 175 | µA | VBAT = 18 V, REG0x12[15] = 1, REG0x30[14:13] = 01, REGN off | 11 | |
| Quiescent current, system powered by battery, BATFET on | IBAT_BATFET_ON | 60 | 90 | µA | VBAT = 18 V, REG0x12[15] = 1, REG0x30[14:13] = 10, REGN off | 11 | |
| Quiescent current, system powered by battery, BATFET on | IBAT_BATFET_ON | 860 | 1150 | µA | VBAT = 18 V, REG0x12[15] = 0, REG0x30[12] = 0, REGN on, EN_PSYS | 11 | |
| IADPT output clamp voltage | VIADPT_CLAMP | 3.1 | 3.2 | 3.3 | V | 12 | |
| Input current monitor accuracy | VIADPT_ACC | -2 | 2 | % | V(ACP-ACN) = 40.96 mV | 12 | |
| Battery common mode range, voltage on SRP/SRN | VSRP/N_OP | 2.5 | 18 | V | 12 | ||
| Junction-to-ambient thermal resistance | RθJA | 37.2 | °C/W | 9 | |||
| Junction-to-case (top) thermal resistance | RθJC(top) | 26.1 | °C/W | 9 | |||
| Junction-to-board thermal resistance | RθJB | 7.8 | °C/W | 9 | |||
| Junction-to-top characterization parameter | ψJT | 0.3 | °C/W | 9 | |||
| Junction-to-board characterization parameter | ψJB | 7.8 | °C/W | 9 | |||
| Junction-to-case (bottom) thermal resistance | RθJC(bot) | 2.3 | °C/W | 9 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | 3. Place an inductor input pin as close as possible to the output pin of the switching MOSFET. Minimize the copper area of this trace to lower electrical and magnetic field radiation but make the trac | 73 |
CAD (KiCad official)
- Symbol:
BQ25700ARSNR - Footprint:
Package_DFN_QFN:QFN-32-1EP_4x4mm_P0.4mm_EP2.9x2.9mm - 3D model: QFN-32(4x4) (KiCad packages3D, STEP)
- 3D model files:
bq25700arsnr-etched.step/bq25700arsnr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bq25700arsnr.step/bq25700arsnr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (85 pp, sha256
c6904d034cbcdca9, retrieved 2026-10-17, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).