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AO4468
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4468
UMW · MOSFETs · SOP-8
AO4468 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | SOURCE terminal of the 30V N-channel MOSFET; the datasheet lists pins 1, 2 and 3 together as SOURCE and gives no separate electrical limit for this pin. |
| 2 | S | passive | SOURCE terminal of the 30V N-channel MOSFET; the datasheet lists pins 1, 2 and 3 together as SOURCE and gives no separate electrical limit for this pin. |
| 3 | S | passive | SOURCE terminal of the 30V N-channel MOSFET; the datasheet lists pins 1, 2 and 3 together as SOURCE and gives no separate electrical limit for this pin. |
| 4 | G | input | GATE terminal of the MOSFET; the absolute maximum gate-source voltage VGS is ±20 V. |
| 5 | D | passive | DRAIN terminal of the MOSFET; the datasheet lists pins 5 to 8 together as DRAIN, with VDS of 30 V and continuous drain current ID of 10.5 A at TA=25°C. |
| 6 | D | passive | DRAIN terminal of the MOSFET; the datasheet lists pins 5 to 8 together as DRAIN, with VDS of 30 V and continuous drain current ID of 10.5 A at TA=25°C. |
| 7 | D | passive | DRAIN terminal of the MOSFET; the datasheet lists pins 5 to 8 together as DRAIN, with VDS of 30 V and continuous drain current ID of 10.5 A at TA=25°C. |
| 8 | D | passive | DRAIN terminal of the MOSFET; the datasheet lists pins 5 to 8 together as DRAIN, with VDS of 30 V and continuous drain current ID of 10.5 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=-250µA, VGS=0V | 3 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | µA | VDS=0V, VGS=±16V | 3 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS=VGS, ID=250μA | 3 |
| On-State Drain Current | ID(ON) | 50 | A | VGS=10V, VDS=5V | 3 | ||
| Zero Gate Voltage Drain Current (TJ=25°C) | IDSS | 1 | µA | VDS=30V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 3 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 14 | 17 | mΩ | VGS=10V, ID=10.5A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 18 | 23 | mΩ | VGS=4.5V, ID=9A | 3 | |
| Diode Forward Voltage | VSD | 0.75 | 1 | V | IS=1A, VGS=0V | 3 | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | 3 | |||
| Total Gate Charge (10V) | Qg(10V) | 15 | 22 | nC | VGS=10V, VDS=15V, ID=10.5A | 3 | |
| Total Gate Charge (4.5V) | Qg(4.5V) | 7.5 | 12 | nC | 3 | ||
| Gate Source Charge | Qgs | 2.5 | nC | 3 | |||
| Gate Drain Charge | Qgd | 3 | nC | 3 | |||
| Turn-On Delay Time | tD(on) | 5 | ns | VGS=10V, VDS=15V, RL=1.45Ω, RGEN=3Ω | 3 | ||
| Turn-On Rise Time | tr | 3.5 | ns | VGS=10V, VDS=15V, RL=1.45Ω, RGEN=3Ω | 3 | ||
| Turn-Off Delay Time | tD(off) | 19 | ns | VGS=10V, VDS=15V, RL=1.45Ω, RGEN=3Ω | 3 | ||
| Turn-Off Fall Time | tf | 3.5 | ns | VGS=10V, VDS=15V, RL=1.45Ω, RGEN=3Ω | 3 | ||
| Body Diode Reverse Recovery Time | trr | 18 | ns | IF=10.5A, dI/dt=100A/μs | 3 | ||
| Body Diode Reverse Recovery Charge | Qrr | 9 | nC | IF=10.5A, dI/dt=100A/μs | 3 | ||
| Input Capacitance | Ciss | 740 | 888 | pF | VGS=0V, VDS=15V, f=1MHz | 3 | |
| Output Capacitance | Coss | 110 | 145 | pF | VGS=0V, VDS=15V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 82 | 115 | pF | VGS=0V, VDS=15V, f=1MHz | 3 | |
| Gate Resistance | Rg | 1.1 | 1.7 | Ω | VGS=0V, VDS=0V, f=1MHz | 3 | |
| Forward Transconductance | gFS | 36 | S | VDS=5V, ID=10.5A | 3 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 10.5 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 8.5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 50 | A | 1 | |||
| Avalanche Current | IAS, IAR | 19 | A | 1 | |||
| Avalanche Energy | EAS, EAR | 18 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | 31 | 40 | °C/W | t ≤ 10s | 2 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 59 | 75 | °C/W | Steady-State | 2 | |
| Maximum Junction-to-Lead | RθJL | 16 | 24 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
AO4468 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4468-etched.step/ao4468-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4468.step/ao4468.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
0345585b0088a9f5, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).