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APP540
Public Made by Adomby adom
ALLPOWER(ShenZhen Quan Li Semiconductor) MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAPP540
ALLPOWER(ShenZhen Quan Li Semiconductor) · MOSFETs · TO-220
APP540 from ALLPOWER(ShenZhen Quan Li Semiconductor), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold 2.0 V min to 4.0 V max at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain; drain-source voltage 100 V max, continuous drain current 33 A at TC=25℃ (tab is also drain per package drawing, not explicitly labeled). |
| 3 | S | passive | Source; body diode forward current IS of 33 A max at TC=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ALLPOWER(ShenZhen Quan Li Semiconductor) |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Ta=25℃ | 1 | |
| Continuous Drain Current | ID | 33 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 23 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 110 | A | Pulse width limited by maximum junction temperature | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 506.25 | mJ | L=10mH,IAS=9A,VDD=80A,VG=10V,RG=25Ω starting TJ=25℃ | 1 | ||
| Power Dissipation | PD | 130 | W | Ta=25℃ | 1 | ||
| Thermal Resistance Junction to Case | RθJC | 0.98 | ℃/W | 1 | |||
| Thermal Resistance Junction to Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 100 | nA | VDS =100V, VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS =±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 2 | 2.8 | 4 | V | VDS =VGS, ID =250µA | 2 |
| Drain-source on-resistance | RDS(on) | 36.2 | 40 | mΩ | VGS =10V, ID =16A | 2 | |
| Gate Resistance | Rg | 1 | 1.81 | 10 | Ω | VGS =0V, f =1.0MHz | 2 |
| Diode Forward voltage | VSD | 0.85 | 1.3 | V | TJ=25℃, VGS =0V, IS=50A | 2 | |
| Diode Forward current | IS | 33 | A | TC=25℃ | 2 | ||
| Input Capacitance | Ciss | 1700 | pF | VDS =25V, VGS =0V, f =1.0MHz | 2 | ||
| Output Capacitance | Coss | 210 | pF | VDS =25V, VGS =0V, f =1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 25 | pF | VDS =25V, VGS =0V, f =1.0MHz | 2 | ||
| Turn-on delay time | td(on) | 9.8 | ns | VDD=50V, ID=16A, VGS =10V, RG=5.1Ω | 2 | ||
| Turn-on rise time | tr | 39.6 | ns | VDD=50V, ID=16A, VGS =10V, RG=5.1Ω | 2 | ||
| Turn-off delay time | td(off) | 46.1 | ns | VDD=50V, ID=16A, VGS =10V, RG=5.1Ω | 2 | ||
| Turn-off fall time | tf | 10.1 | ns | VDD=50V, ID=16A, VGS =10V, RG=5.1Ω | 2 | ||
| Total Gate Charge | Qg | 33.1 | nC | VDS=80V, ID=16A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 6.1 | nC | VDS=80V, ID=16A, VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 14.7 | nC | VDS=80V, ID=16A, VGS=10V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 102 | ns | TJ=25℃, IF=50A, di/dt=100A/us | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 1.1 | uc | TJ=25℃, IF=50A, di/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
APP540 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
app540-etched.step/app540-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);app540.step/app540.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ALLPOWER(ShenZhen Quan Li Semiconductor) datasheet (5 pp, sha256
4d3f96dc6e1bd8ce, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).