component
IRFH5006TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFH5006TRPBF-VB
VBsemi Elec · MOSFETs · DFN-8(5x6)
IRFH5006TRPBF-VB from VBsemi Elec, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1, marked by the PIN1 dot); VGS is rated at ±20 V relative to this pin. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected in parallel with the other source pins; continuous source current (diode conduction) is rated at 80 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected in parallel with the other source pins; the junction operating range is -55 to 175 °C. |
| 4 | G | input | Gate terminal of the N-channel MOSFET with a gate-source voltage limit of ±20 V and a gate threshold voltage of 1 V min, 2 V typ, 3 V max at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the 60 V N-channel MOSFET, connected in parallel with the other drain pins; continuous drain current is 100 A at TC = 25 °C. |
| 6 | D | passive | Drain terminal of the 60 V N-channel MOSFET, connected in parallel with the other drain pins; pulsed drain current is rated at 100 A. |
| 7 | D | passive | Drain terminal of the 60 V N-channel MOSFET, connected in parallel with the other drain pins; drain-source breakdown voltage is 60 V min at ID = 250 µA. |
| 8 | D | passive | Drain terminal of the 60 V N-channel MOSFET, connected in parallel with the other drain pins; RDS(on) is 0.003 ohm typ at VGS = 10 V, ID = 20 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
IRFH5006TRPBF-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
irfh5006trpbf-vb-etched.step/irfh5006trpbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfh5006trpbf-vb.step/irfh5006trpbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
d07206cb8785b6b8, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).