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MMBTA94-MS

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Datasheet

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Contents

README

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MMBTA94-MS

MSKSEMI · Bipolar (BJT) · SOT-23

MMBTA94-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives no pin-specific limit, only device ratings such as VEBO -5 V and IC -200 mA continuous.
2 EMITTER passive Emitter terminal of the PNP transistor; the datasheet gives no pin-specific limit, only device ratings such as VEBO -5 V and VCEO -400 V.
3 COLLECTOR passive Collector terminal of the PNP transistor; the datasheet gives no pin-specific limit, only device ratings such as VCBO -400 V and PC 350 mW.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -400 V 2
Collector-emitter voltage VCEO -400 V 2
Emitter-base voltage VEBO -5 V 2
Collector current, continuous IC -200 mA 2
Collector current, pulsed ICM -300 mA 2
Collector power dissipation PC 350 mW 2
Junction temperature Tj 150 ℃ 2
Storage temperature Tstg -55 150 ℃ 2
Collector-base breakdown voltage V(BR)CBO -400 V IC=-100µA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -400 V IC=-1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100µA, IC=0 2
Collector cut-off current ICBO -0.1 µA VCB=-400V, IE=0 2
Collector cut-off current ICEO -5 µA VCE=-400V, IB=0 2
Emitter cut-off current IEBO -0.1 µA VEB=-4V, IC=0 2
DC current gain hFE(1) hFE(1) 80 300 VCE=-10V, IC=-10mA 2
DC current gain hFE(2) hFE(2) 70 VCE=-10V, IC=-1mA 2
DC current gain hFE(3) hFE(3) 40 VCE=-10V, IC=-100mA 2
DC current gain hFE(4) hFE(4) 40 VCE=-10V, IC=-50mA 2
Collector-emitter saturation voltage VCE(sat)1 VCE(sat)1 -0.2 V IC=-10mA, IB=-1mA 2
Collector-emitter saturation voltage VCE(sat)2 VCE(sat)2 -0.3 V IC=-50mA, IB=-5mA 2
Base-emitter saturation voltage VBE(sat) -0.75 V IC=-10mA, IB=-1mA 2
Transition frequency fT 50 MHz VCE=-20V, IC=-10mA, f=30MHz 2
Thermal resistance, junction to ambient RΘJA 357 ℃/W 2

CAD (KiCad official)

  • Symbol: MMBTA94-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbta94-ms-etched.step / mmbta94-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta94-ms.step / mmbta94-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 2d98f1f07b106855, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF