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Contents

README

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NTS2101PT1G-MS

MSKSEMI · MOSFETs · SOT-323

NTS2101PT1G-MS from MSKSEMI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the P-channel MOSFET, with VGS rated ±12 V and threshold -0.3 to -1.0 V at ID=-250uA.
2 S passive Source; continuous drain current is -1.5 A at TC=25℃ and the body diode is rated -1.5 A continuous.
3 D passive Drain; drain-source voltage is rated -20 V and continuous drain current -1.5 A at TC=25℃ (-6 A pulsed).

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 2
Gate-Source Voltage VGS -12 12 V 2
Drain Current - Continuous ID -1.5 A TC=25℃ 2
Drain Current - Continuous ID -0.95 A TC=100℃ 2
Drain Current - Pulsed IDM -6 A 2
Power Dissipation PD 312 mW TC=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction to ambient RθJA 400 ℃/W 2
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250uA 3
Drain-Source Leakage Current IDSS -1 uA VDS=-20V, VGS=0V, TJ=25 3
Drain-Source Leakage Current IDSS -10 uA VDS=-16V, VGS=0V, TJ=125 3
Gate-Source Leakage Current IGSS 100 nA VGS 12V, VDS=0V 3
Static Drain-Source On-Resistance RDS(ON) 90 110 mΩ VGS=-4.5V, ID=-1A 3
Static Drain-Source On-Resistance RDS(ON) 110 135 mΩ VGS=-2.5V, ID=-1A 3
Gate Threshold Voltage VGS(th) -0.3 -0.6 -1 V VGS=VDS, ID=-250uA 3
Total Gate Charge Qg 4.8 8 nC VDS=-10V, VGS=-4.5V, ID=-1A 3
Gate-Source Charge Qgs 0.5 1 nC VDS=-10V, VGS=-4.5V, ID=-1A 3
Gate-Drain Charge Qgd 1.9 4 nC VDS=-10V, VGS=-4.5V, ID=-1A 3
Turn-On Delay Time Td(on) 3.5 7 ns VDD=-10V, VGS=-4.5V, RG=25, ID=-1A 3
Rise Time Tr 12.6 24 ns VDD=-10V, VGS=-4.5V, RG=25, ID=-1A 3
Turn-Off Delay Time Td(off) 32.6 62 ns VDD=-10V, VGS=-4.5V, RG=25, ID=-1A 3
Fall Time Tf 8.4 16 ns VDD=-10V, VGS=-4.5V, RG=25, ID=-1A 3
Input Capacitance Ciss 350 510 pF VDS=-15V, VGS=0V, F=1MHz 3
Output Capacitance Coss 65 95 pF VDS=-15V, VGS=0V, F=1MHz 3
Reverse Transfer Capacitance Crss 50 75 pF VDS=-15V, VGS=0V, F=1MHz 3
Continuous Source Current IS -1.5 A VG=VD=0V, Force Current 3
Pulsed Source Current ISM -3 A 3
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: NTS2101PT1G-MS
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: nts2101pt1g-ms-etched.step / nts2101pt1g-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nts2101pt1g-ms.step / nts2101pt1g-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 dd308d188d7c6394, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF