component
PJM3018NSA
Public Made by Adomby adom
PJSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPJM3018NSA
PJSEMI · MOSFETs · SOT-23
PJM3018NSA from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS, absolute maximum), and gate threshold VGS(th) is 0.8 V min to 2.5 V max at VDS=VGS, ID=250μA. |
| 2 | Source | passive | Source of the N-channel MOSFET, the reference terminal for VGS; the source-drain diode has a forward current rating of 0.5 A and forward voltage of 1.2 V max at VGS=0V, IS=0.5A. |
| 3 | Drain | passive | Drain of the N-channel MOSFET; drain-source voltage is rated at 30 V and continuous drain current at 0.5 A, with maximum power dissipation of 0.35 W for the device. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 0.5 | A | 1 | |||
| Maximum Power Dissipation | PD | 0.35 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 357 | °C/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 1) | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.8 | 2.5 | V | VDS=VGS,ID=250μA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 2 | 3 | Ω | VGS=10V,ID=0.3A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 2.5 | 4 | Ω | VGS=4.5V,ID=0.2A | 2 | |
| Forward Transconductance | gFS | 20 | mS | VDS=3V,ID=10mA | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=0.5A | 2 | ||
| Diode Forward Current | IS | 0.5 | A | 2 |
CAD (KiCad official)
- Symbol:
PJM3018NSA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pjm3018nsa-etched.step/pjm3018nsa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm3018nsa.step/pjm3018nsa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (6 pp, sha256
e57134e69a614a50, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).