component
NTMD6N02R2G
Public Made by Adomby adom
onsemi MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTMD6N02R2G
onsemi · MOSFETs · SOIC-8
NTMD6N02R2G from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SOURCE 1 | passive | Source terminal of N-channel MOSFET 1; the datasheet gives the device VDSS as 20 V and VGS as ±12 V, with no separate pin-level limit. |
| 2 | GATE 1 | input | Gate of N-channel MOSFET 1; continuous gate-to-source voltage is rated at 12 V (IGSS tested at ±12 V). |
| 3 | SOURCE 2 | passive | Source terminal of N-channel MOSFET 2; the datasheet gives the device VDSS as 20 V and VGS as ±12 V, with no separate pin-level limit. |
| 4 | GATE 2 | input | Gate of N-channel MOSFET 2; continuous gate-to-source voltage is rated at 12 V (IGSS tested at ±12 V). |
| 5 | DRAIN 2 | passive | Drain terminal of N-channel MOSFET 2 (paired with pin 6); drain-to-source voltage is rated at 20 V. |
| 6 | DRAIN 2 | passive | Drain terminal of N-channel MOSFET 2 (paired with pin 5); drain-to-source voltage is rated at 20 V. |
| 7 | DRAIN 1 | passive | Drain terminal of N-channel MOSFET 1 (paired with pin 8); drain-to-source voltage is rated at 20 V. |
| 8 | DRAIN 1 | passive | Drain terminal of N-channel MOSFET 1 (paired with pin 7); drain-to-source voltage is rated at 20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 20 | V | TJ = 25°C unless otherwise noted | 1 | ||
| Drain-to-Gate Voltage | VDGR | 20 | V | RGS = 1.0 M | 1 | ||
| Gate-to-Source Voltage - Continuous | VGS | 12 | V | Continuous | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note 1) | RJA | 62.5 | °C/W | Mounted onto 2 in square FR-4 board (1 in sq. 2 oz. Cu), t < 10 seconds | 1 | ||
| Total Power Dissipation (Note 1) | PD | 2 | W | TA = 25°C, Note 1 | 1 | ||
| Continuous Drain Current (Note 1) | ID | 6.5 | A | TA = 25°C, Note 1 | 1 | ||
| Continuous Drain Current (Note 1) | ID | 5.5 | A | TA = 70°C, Note 1 | 1 | ||
| Pulsed Drain Current (Note 4) | IDM | 50 | A | Pulse Width = 10 s, Duty Cycle = 2% (Note 4), Note 1 | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 102 | °C/W | Mounted onto 2 in square FR-4 board (1 in sq. 2 oz. Cu), t = steady state | 1 | ||
| Total Power Dissipation (Note 2) | PD | 1.22 | W | TA = 25°C, Note 2 | 1 | ||
| Continuous Drain Current (Note 2) | ID | 5.07 | A | TA = 25°C, Note 2 | 1 | ||
| Continuous Drain Current (Note 2) | ID | 4.07 | A | TA = 70°C, Note 2 | 1 | ||
| Pulsed Drain Current (Note 4) | IDM | 40 | A | Pulse Width = 10 s, Duty Cycle = 2% (Note 4), Note 2 | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Note 3) | RJA | 172 | °C/W | Minimum FR-4 or G-10 PCB, t = steady state | 1 | ||
| Total Power Dissipation (Note 3) | PD | 0.73 | W | TA = 25°C, Note 3 | 1 | ||
| Continuous Drain Current (Note 3) | ID | 3.92 | A | TA = 25°C, Note 3 | 1 | ||
| Continuous Drain Current (Note 3) | ID | 3.14 | A | TA = 70°C, Note 3 | 1 | ||
| Pulsed Drain Current (Note 4) | IDM | 30 | A | Pulse Width = 10 s, Duty Cycle = 2% (Note 4), Note 3 | 1 | ||
| Operating and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C | EAS | 360 | mJ | VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 6.0 Apk, L = 20 mH, RG = 25 | 2 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C | for 10 seconds | 2 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 20 | Vdc | VGS = 0 Vdc, ID = 250 Adc | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | Adc | VDS = 20 Vdc, VGS = 0 Vdc, TJ = 25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | Adc | VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nAdc | VGS = +12 Vdc, VDS = 0 Vdc | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | nAdc | VGS = -12 Vdc, VDS = 0 Vdc | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.6 | 0.9 | 1.2 | Vdc | VDS = VGS, ID = -250 Adc | 2 |
| Static Drain-to-Source On-State Resistance | RDS(on) | 0.028 | 0.035 | Ω | VGS = 4.5 Vdc, ID = 6.0 Adc | 2 | |
| Static Drain-to-Source On-State Resistance | RDS(on) | 0.028 | 0.043 | Ω | VGS = 4.5 Vdc, ID = 4.0 Adc | 2 | |
| Static Drain-to-Source On-State Resistance | RDS(on) | 0.033 | 0.048 | Ω | VGS = 2.7 Vdc, ID = 2.0 Adc | 2 | |
| Static Drain-to-Source On-State Resistance | RDS(on) | 0.035 | 0.049 | Ω | VGS = 2.5 Vdc, ID = 3.0 Adc | 2 | |
| Input Capacitance | Ciss | 785 | 1100 | pF | VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz | 2 | |
| Output Capacitance | Coss | 260 | 450 | pF | VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 75 | 180 | pF | VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz | 2 | |
| Turn-On Delay Time | td(on) | 12 | 20 | ns | VDD = 16 Vdc, ID = 6.0 Adc, VGS = 4.5 Vdc, RG = 6.0 | 2 | |
| Rise Time | tr | 50 | 90 | ns | VDD = 16 Vdc, ID = 6.0 Adc, VGS = 4.5 Vdc, RG = 6.0 | 2 | |
| Turn-Off Delay Time | td(off) | 45 | 75 | ns | VDD = 16 Vdc, ID = 6.0 Adc, VGS = 4.5 Vdc, RG = 6.0 | 2 | |
| Fall Time | tf | 80 | 130 | ns | VDD = 16 Vdc, ID = 6.0 Adc, VGS = 4.5 Vdc, RG = 6.0 | 2 | |
| Turn-On Delay Time | td(on) | 11 | 18 | ns | VDD = 16 Vdc, ID = 4.0 Adc, VGS = 4.5 Vdc, RG = 6.0 | 2 | |
| Rise Time | tr | 35 | 65 | ns | VDD = 16 Vdc, ID = 4.0 Adc, VGS = 4.5 Vdc, RG = 6.0 | 2 | |
| Fall Time | tf | 60 | 110 | ns | VDD = 16 Vdc, ID = 4.0 Adc, VGS = 4.5 Vdc, RG = 6.0 | 2 | |
| Total Gate Charge | Qtot | 12 | 20 | nC | VDS = 16 Vdc, VGS = 4.5 Vdc, ID = 6.0 Adc | 2 | |
| Diode Forward On-Voltage | VSD | 0.83 | 1.1 | Vdc | IS = 4.0 Adc, VGS = 0 Vdc | 3 | |
| Diode Forward On-Voltage | VSD | 0.88 | 1.2 | Vdc | IS = 6.0 Adc, VGS = 0 Vdc | 3 | |
| Diode Forward On-Voltage | VSD | 0.75 | Vdc | IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C | 3 | ||
| Temperature Coefficient (Positive) of V(BR)DSS | 19.2 | mV/°C | 2 | ||||
| Temperature Coefficient (Negative) of VGS(th) | -3 | mV/°C | 2 |
CAD (KiCad official)
- Symbol:
NTMD6N02R2G - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ntmd6n02r2g-etched.step/ntmd6n02r2g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntmd6n02r2g.step/ntmd6n02r2g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
6b7bba2505cf1e4b, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).