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2SD882SQ

Public Made by Adom

by adom

JUXING Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors2sd882sqfactory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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2SD882SQ

JUXING · Bipolar (BJT) · SOT-89

2SD882SQ from JUXING, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the NPN transistor; the base-emitter saturation voltage is specified at IC = 2 A with IB = 0.2 A (VBE(sat) max 2 V).
2 C passive Collector terminal; rated for a collector-to-base voltage VCBO of 40 V, collector-to-emitter voltage VCEO of 30 V, continuous collector current IC of 3 A and peak collector current ICP of 7 A.
3 E passive Emitter terminal; the emitter-to-base voltage rating VEBO is 5 V.

Key specifications

Parameter Value
Manufacturer JUXING
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain, 20 mA group (VCE = 2 V, IC = 20 mA) hFE 30 at VCE = 2 V, IC = 20 mA 2
DC Current Gain, Group R (VCE = 2 V, IC = 1 A) hFE 60 120 at VCE = 2 V, IC = 1 A; Current Gain Group R 2
DC Current Gain, Group Q (VCE = 2 V, IC = 1 A) hFE 100 200 at VCE = 2 V, IC = 1 A; Current Gain Group Q 2
DC Current Gain, Group P (VCE = 2 V, IC = 1 A) hFE 160 320 at VCE = 2 V, IC = 1 A; Current Gain Group P 2
DC Current Gain, Group E (VCE = 2 V, IC = 1 A) hFE 200 400 at VCE = 2 V, IC = 1 A; Current Gain Group E 2
Collector Base Cutoff Current ICBO 1 µA at VCB = 30 V 2
Emitter Base Cutoff Current IEBO 1 µA at VEB = 3 V 2
Collector Emitter Saturation Voltage VCE(sat) 0.5 V at IC = 2 A, IB = 0.2 A 2
Base Emitter Saturation Voltage VBE(sat) 2 V at IC = 2 A, IB = 0.2 A 2
Collector to Base Voltage VCBO 40 V 1
Collector to Emitter Voltage VCEO 30 V 1
Emitter to Base Voltage VEBO 5 V 1
Collector Current-Continuous IC 3 A 1
Peak Collector Current ICP 7 A 1
Total Power Dissipation PD 1 W 1
Total Power Dissipation (Tc = 25℃) PD 10 W Tc=25℃ 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing Abs PIN1：Base PIN 2：Collector PIN 3：Emitter Absolute Maximum Ratings (Ta=25℃unless otherwise specified) 1

CAD (KiCad official)

  • Symbol: 2SD882SQ
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sd882sq-etched.step / 2sd882sq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd882sq.step / 2sd882sq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JUXING datasheet (3 pp, sha256 e7313bec322c8f43, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF