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STF38N65M5

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STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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STF38N65M5

STMicroelectronics · MOSFETs · TO-220FP

STF38N65M5 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with gate-source voltage limited to ±25 V (VGS) per Table 1.
2 D passive Drain terminal, also connected to the metal tab, with drain-source voltage rated at 650 V (VDS) per Table 1.
3 S passive Source terminal of the MOSFET, with continuous source-drain current limited to 30 A (ISD) per Table 7.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220FP
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 650 V 2
Gate-source voltage VGS -25 25 V 2
Drain current (continuous) at TC = 25 °C ID 30 A TC = 25 °C 2
Drain current (continuous) at TC = 100 °C ID 19 A TC = 100 °C 2
Drain current (pulsed) IDM 120 A Pulse width limited by safe operating area 2
Total power dissipation TO-220FP PTOT 35 W TC = 25 °C 2
Peak diode recovery voltage slope dv/dt(2) 15 V/ns ISD ≤ 30 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V 2
MOSFET dv/dt ruggedness dv/dt(3) 50 V/ns VDS ≤ 520 V 2
Insulation withstand voltage (RMS) TO-220FP VISO 2.5 kV From all three leads to external heat sink, t = 1 s, TC = 25 °C 2
Storage temperature range Tstg -55 150 °C 2
Maximum operating junction temperature TJ 150 °C 2
Avalanche current, repetitive or not-repetitive IAR 8 A Pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 660 mJ Starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Thermal resistance junction-to-case TO-220FP RthJC 3.6 °C/W 2
Thermal resistance junction-to-ambient TO-220FP RthJA 62.5 °C/W 2
Drain-source breakdown voltage V(BR)DSS 650 V VGS = 0 V, ID = 1 mA 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 650 V 3
Zero gate voltage drain current at TC = 125 °C IDSS 100 µA VGS = 0 V, VDS = 650 V, TC = 125 °C 3
Gate-body leakage current IGSS -100 100 nA VDS = 0 V, VGS = ±25 V 3
Gate threshold voltage VGS(th) 3 4 5 V VDS = VGS, ID = 250 µA 3
Static drain-source on-resistance RDS(on) 73 95 mΩ VGS = 10 V, ID = 15 A 3
Source-drain current ISD 30 A 4
Source-drain current (pulsed) ISDM 120 A 4
Forward on voltage VSD 1.5 V ISD = 30 A, VGS = 0 V 4

CAD (KiCad official)

  • Symbol: STF38N65M5
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220FP (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (17 pp, sha256 764eeb36dfb6fbaf, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF