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Contents

README

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NX7002BKR

Nexperia · MOSFETs · SOT-23

NX7002BKR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated -20 V to 20 V at Tj = 25 °C.
2 S passive Source terminal of the MOSFET; source current (IS) is rated at 200 mA maximum at Tamb = 25 °C.
3 D passive Drain terminal of the MOSFET; drain-source voltage is rated 60 V maximum, with continuous drain current up to 270 mA at Tamb = 25 °C (VGS = 10 V).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
drain-source voltage VDS 60 V 3
gate-source voltage VGS -20 20 V Tj = 25 °C 3
drain current ID 270 mA VGS = 10 V; Tamb = 25 °C [1] 3
drain current ID 170 mA VGS = 10 V; Tamb = 100 °C [1] 3
drain current ID 330 mA VGS = 10 V; Tsp = 25 °C 3
peak drain current IDM 0.9 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
total power dissipation Ptot 310 mW Tamb = 25 °C [2] 3
total power dissipation Ptot 400 mW [1] (no test condition printed) 3
total power dissipation Ptot 1670 mW Tsp = 25 °C 3
junction temperature Tj -55 150 °C 3
ambient temperature Tamb -55 150 °C 3
storage temperature Tstg -65 150 °C 3
source current IS 200 mA Tamb = 25 °C [1] 3
thermal resistance from junction to ambient Rth(j-a) 350 405 K/W in free air; [1] device on FR4 PCB, single-sided copper, tin-plated, standard footprint 4
thermal resistance from junction to ambient Rth(j-a) 270 310 K/W in free air; [2] device on FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2 4
thermal resistance from junction to solder point Rth(j-sp) 65 75 K/W 4
drain-source breakdown voltage V(BR)DSS 60 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
gate-source threshold voltage VGSth 1.1 1.6 2.1 V ID = 250 µA; VDS = VGS; Tj = 25 °C 6
drain leakage current IDSS 1 µA VDS = 60 V; VGS = 0 V; Tj = 25 °C 6
gate leakage current IGSS 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS -10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS 1 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS -1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS 0.3 µA VGS = 5 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS -0.3 µA VGS = -5 V; VDS = 0 V; Tj = 25 °C 6
drain-source on-state resistance RDSon 2.2 2.8 Ω VGS = 10 V; ID = 200 mA; Tj = 25 °C 6
drain-source on-state resistance RDSon 4.5 5.7 Ω VGS = 10 V; ID = 100 mA; Tj = 150 °C 6
drain-source on-state resistance RDSon 2.5 3.2 Ω VGS = 5 V; ID = 200 mA; Tj = 25 °C 6
source-drain voltage VSD 0.87 1.2 V IS = 200 mA; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: NX7002BKR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nx7002bkr-etched.step / nx7002bkr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nx7002bkr.step / nx7002bkr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (16 pp, sha256 568045cb801dbeae, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF