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9435-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistor9435-hxyfactory-2.0.0extractor-text

Verified 9435-HXY

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: 9435-HXY · SOP-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-bx_8266k/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ 9435-hxy.kicad_sym✓ 9435-hxy.kicad_mod✓ 9435-hxy.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

9435-HXY

HXY MOSFET · MOSFETs · SOP-8

9435-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, one of three source pins (S S S) shown on the SOP-8 diagram; device is rated VDS = -30V, ID = -5.1A.
2 S passive Source of the P-channel MOSFET, one of three source pins (S S S) shown on the SOP-8 diagram; device is rated VDS = -30V, ID = -5.1A.
3 S passive Source of the P-channel MOSFET, one of three source pins (S S S) shown on the SOP-8 diagram; device is rated VDS = -30V, ID = -5.1A.
4 G input Gate of the P-channel MOSFET, with absolute maximum VGS of ±20V and threshold VGS(th) of -1.0V min to -2.5V max at ID = -250µA.
5 D passive Drain of the P-channel MOSFET, one of four drain pins (D D D D) shown on the SOP-8 diagram; VDS max -30V, pulsed ID up to -20.4A.
6 D passive Drain of the P-channel MOSFET, one of four drain pins (D D D D) shown on the SOP-8 diagram; VDS max -30V, pulsed ID up to -20.4A.
7 D passive Drain of the P-channel MOSFET, one of four drain pins (D D D D) shown on the SOP-8 diagram; VDS max -30V, pulsed ID up to -20.4A.
8 D passive Drain of the P-channel MOSFET, one of four drain pins (D D D D) shown on the SOP-8 diagram; VDS max -30V, pulsed ID up to -20.4A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -30V, VGS = 0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS =0V, VGS = ±20V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS= VGS, ID= -250μA 2
Static Drain-Source On-Resistance RDS(on) 43 55 mΩ VGS =-10V, ID =-5A 2
Static Drain-Source On-Resistance RDS(on) 65 90 mΩ VGS =-4.5V, ID =-4A 2
Maximum Continuous Drain to Source Diode Forward Current IS -5.1 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -20.4 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0V, IS = -5.1A 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current ID -5.1 A TA=25℃, VGS @ 10V 1
Pulsed Drain Current IDM -20.4 A 1
Total Power Dissipation PD 2.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 58 ℃/W 1
Input Capacitance Ciss 596 pF VDS = -15V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 59 pF VDS = -15V, VGS = 0V, f = 1.0MHz 2
Total Gate Charge Qg 6.8 nC VDS= -15V, ID = -5.1A, VGS = -10V 2
Gate-Source Charge Qgs 1 nC VDS= -15V, ID = -5.1A, VGS = -10V 2
Gate-Drain (Miller) Charge Qgd 1.4 nC VDS= -15V, ID = -5.1A, VGS = -10V 2
Turn-on Delay Time td(on) 14 ns VDD = -15V, ID = -1A, VGS=-10V, RGEN=2.5Ω 2
Turn-on Rise Time tr 16 ns VDD = -15V, ID = -1A, VGS=-10V, RGEN=2.5Ω 2
Turn-off Fall Time tf 10 ns VDD = -15V, ID = -1A, VGS=-10V, RGEN=2.5Ω 2

CAD (KiCad official)

  • Symbol: 9435-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: 9435-hxy-etched.step / 9435-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 9435-hxy.step / 9435-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 a9690a3941308dc5, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF