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Contents

README

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PNU65010EPX

Nexperia · Switching Diodes · SOD-128

PNU65010EPX from Nexperia, in a SOD-128. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode terminal of the diode; the cathode tab is the heat-sinking path, with thermal resistance junction-to-solder-point specified at the soldering point of the cathode tab (8 K/W maximum).
2 A passive Anode terminal of the diode; the datasheet gives no pin-specific electrical limit, so device limits in Table 5 (for example VRRM 650 V and IF(AV) 1 A) apply.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOD-128
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 650 V 2
Reverse voltage VR 650 V 2
RMS voltage VRMS 460 V Tj = 25 °C 2
Forward current IF 1.4 A δ = 1; Tsp ≤ 165 °C 2
Average forward current IF(AV) 1 A δ = 0.5; f = 20 kHz; square wave; Tsp ≤ 167 °C 2
Non-repetitive peak forward current IFSM 33 A tp = 8.3 ms; single half sine wave (applied at rated load condition); Tj(init) = 25 °C 2
Total power dissipation Ptot 0.81 W Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] 2
Total power dissipation Ptot 1.3 W FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm² [2] 2
Junction temperature Tj 175 °C 2
Ambient temperature Tamb -55 175 °C 2
Storage temperature Tstg -65 175 °C 2
Thermal resistance from junction to ambient in free air Rth(j-a) 185 K/W FR4 PCB, single-sided copper, tin-plated, standard footprint [1] 3
Thermal resistance from junction to ambient in free air Rth(j-a) 115 K/W FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm² [2] 3
Thermal resistance from junction to solder point Rth(j-sp) 8 K/W soldering point of cathode tab [3] 3
Reverse breakdown voltage V(BR)R 650 V IR = 100 µA; Tj = 25 °C [1] 4
Forward voltage VF 1 1.2 V IF = 1 A; Tj = 25 °C [1] 4
Forward voltage VF 0.93 1.06 V IF = 1 A; Tj = 125 °C [1] 4
Reverse current IR 1 µA VR = 650 V; Tj = 25 °C [1] 4
Reverse current IR 0.5 10 µA VR = 650 V; Tj = 125 °C [1] 4
Reverse recovery time; step recovery trr 35 65 ns IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A; Tj = 25 °C 4
Reverse recovery time; step recovery trr 39 85 ns IF = 1 A; dIF/dt = 50 A/µs; VR = 30 V; Tj = 25 °C 4

CAD (KiCad official)

  • Symbol: PNU65010EPX
  • Footprint: Diode_SMD:D_SOD-128
  • 3D model: SOD-128 (KiCad packages3D, STEP)
  • 3D model files: pnu65010epx-etched.step / pnu65010epx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pnu65010epx.step / pnu65010epx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (12 pp, sha256 4436178b6171d650, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF