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Contents

README

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STGP20H60DF

STMicroelectronics · IGBT Transistors / Modules · TO-220

STGP20H60DF from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the IGBT, where the gate-emitter voltage is limited to ±20 V (Table 1, absolute maximum ratings).
2 C passive Collector terminal, rated for a collector-emitter voltage VCES of 600 V (VGE = 0 V) and a continuous collector current of 40 A at TC = 25 °C or 20 A at TC = 100 °C.
3 E passive Emitter terminal of the IGBT; the datasheet gives no separate emitter-pin rating beyond the device ratings in Table 1.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STGP20H60DF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stgp20h60df-etched.step / stgp20h60df-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgp20h60df.step / stgp20h60df.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (22 pp, sha256 39697b0ca0214ad4, retrieved 2026-10-07, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF