component
MDD1951RH-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMDD1951RH-HXY
HXY MOSFET · MOSFETs · TO-252-2L
MDD1951RH-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±20 V (VGS) and the device is specified for operation with gate voltages as low as 4.5 V. |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 60 V (VDS) with continuous drain current of 20 A at TC=25℃ (VGS @ 10V). |
| 3 | S | passive | Source terminal; continuous source current is rated 20 A (IS, TC=25℃) and the body diode forward voltage is at most 1.2 V at IS = 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 20 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 10 | A | TC=100℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 38 | mJ | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 34.7 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | TJ=25°C, VDS = 60V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | µA | TJ=100°C, VDS = 60V, VGS = 0V | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source on-Resistance | RDS(on) | 25 | 32 | mΩ | VGS = 10V, ID = 10A | 2 | |
| Drain-Source on-Resistance | RDS(on) | 31.5 | 40 | mΩ | VGS = 4.5V, ID = 5A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS = 10A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | 20 | A | TC=25°C | 2 |
CAD (KiCad official)
- Symbol:
MDD1951RH-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
mdd1951rh-hxy-etched.step/mdd1951rh-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mdd1951rh-hxy.step/mdd1951rh-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
ca48622e27b92893, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).