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Contents

README

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IPD048N06L3 G

Infineon Technologies · MOSFETs · TO-252

IPD048N06L3 G from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin of the N-channel logic-level MOSFET; gate-source voltage limited to ±20 V.
2 D passive Drain pin, also the tab; VDS 60 V, continuous drain current 90 A at TC=25 °C (pulsed 360 A).
3 S passive Source pin of the N-channel MOSFET; RDS(on) max 4.8 mΩ.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IPD048N06L3 G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd048n06l3-g-etched.step / ipd048n06l3-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd048n06l3-g.step / ipd048n06l3-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 487a1c80e5c6f28c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF